Allicdata Part #: | 2N4416-ND |
Manufacturer Part#: |
2N4416 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | JFET N-CH 30V 0.3W TO-206AF |
More Detail: | JFET N-Channel 30V 300mW Through Hole TO-206AF (T... |
DataSheet: | 2N4416 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 5mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 3V @ 1nA |
Input Capacitance (Ciss) (Max) @ Vds: | 4pF @ 15V |
Power - Max: | 300mW |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AF, TO-72-4 Metal Can |
Supplier Device Package: | TO-206AF (TO-72) |
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The 2N4416 is a General-Purpose Junction Field-Effect Transistor (JFET) used for a variety of applications in industrial and consumer electronics. It is made from a N-channel enhancement type JFET with a uniquely shaped gate-source depletion region. The 2N4416 is a popular JFET because it delivers excellent performance, it is relatively easy to use and it is very cost-effective.The function of a JFET is to control the flow of current between its source and drain terminals. The 2N4416 does this by using the gate-source depletion region, which is an area of the device where the application of voltage to the gate modifies the current flowing between the source and drain by creating a depletion layer where current cannot pass. This is because of the transverse field generated by the gate-voltage, which induces a change in charge within the depletion layer.
The operating principle of the 2N4416 consists of three regions. The first is the cut-off region, which occurs when the gate-source voltage is lower than the pinch-off threshold voltage, turning the transistor off. The second is the linear region, which is the normal operating region. Here, the current between the source and drain is a linear function of the gate-source voltage. The last is the saturation region, which occurs when the gate-source voltage exceeds the pinch-off voltage, leading to the maximum current through the medium.
The 2N4416 can operate in either depletion or enhancement mode. Depletion mode means that the voltage applied to the gate is slightly negative, allowing the current to flow unimpeded. With the proper biasing circuitry, the 2N4416 can be operated in the linear mode, which is ideal for applications such as voltage controlled resistors, media amplifiers and signal conditioning.
The 2N4416 is highly versatile, making it a popular choice for a wide range of applications. This includes anything from general-purpose amplifier applications to more specialized ones such as pH meters, temperature sensors and process control circuits, as well as power amplifiers. Furthermore, its low gate-source capacitance makes the 2N4416 ideal for RF applications, such as high-frequency amplifiers and radios.
Overall, the 2N4416 is an incredibly versatile and cost-effective General-Purpose JFET that can be used in a wide range of applications. Its unique gate-source depletion region, coupled with its linear operating region, makes it ideal for low-voltage applications as well as high-frequency applications for RF applications. Its ease of use and popularity make it a go-to choice for electronics enthusiasts.
The specific data is subject to PDF, and the above content is for reference
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