Allicdata Part #: | 2N4402_S00Z-ND |
Manufacturer Part#: |
2N4402_S00Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 40V 0.6A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 600mA 625mW Thro... |
DataSheet: | 2N4402_S00Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 750mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 150mA, 2V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N4402 |
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The 2N4402_S00Z is a part of the NPN-type single bipolar junction transistors (BJT). It is manufactured by many different companies such as Motorola, STMicroelectronics, and Harris. It has three lead terminals: the collector, the emitter, and the base. The 2N4402_S00Z is a so-called “silicon” type transistor, with a PN junction of silicon oxide. It has a high current gain and high frequency response.
The 2N4402_S00Z has a wide range of applications. It is commonly used in audio applications such as in pre-amplifiers and amplifiers. It is also used in the manufacture of linear power supplies,, turn-off delay time adjustments for audio amplifiers, low-voltage switching power supplies and DC motor drives. Some other applications include tone controls, voltage regulators, pulse-width modulators, amplifier transformers, oscillators, as well as television circuits.
The working principle of the 2N4402_S00Z is based on the “ transistor action”. When the base terminal of the transistor is forward biased, electrons move from the emitter to the collector. This action creates an amplified current flow from the collector to the emitter. The amplified current flow is dependant on the current applied to the base terminal.
The 2N4402_S00Z features a wide range of features making it suitable for many types of applications. It has a high current gain (hFE) of at least 80, very low thermal resistance of 27°C/W, and a guaranteed maximum power dissipation of 13mW per person. Additionally, the 2N4402_S00Z has a minimum voltage breakdown rating of 40V.
The 2N4402_S00Z also has a high maximum operating frequency up to 400MHz and excellent frequency response characteristics. It is also immune to thermal runaway and its collector-emitter breakdown voltage is very stable when the transistor junction temperature is kept low.
The 2N4402_S00Z is widely used in the electronics industry due to its broad range of features and excellent performance. Its ability to amplify signals accurately and reliably makes it a popular choice for many types of applications. Its high power efficiency and low power consumption also make it a cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
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