2N5484_D26Z

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2N5484_D26Z Application Field and Working Principle

2N5484_D26Z is a type of field effect transistor (FET) which is widely used in radio frequency (RF) applications. It is a vertical depletion mode (VDM) transistor with an N-channel enhancement-mode structure and drain-gate breakdown voltage of 20 volts.

The transistor has been tested to operate over a wide frequency range of 865MHz up to approximately 2.7GHz, making it suitable for applications such as low noise amplifiers, RF power amplifiers, switches and mixers. In addition, it has low input and output capacitances, making it ideal for switching circuits and broadband applications.

The working principle of the 2N5484_D26Z is based on transistor action. It consists of three terminals: source, drain, and gate. When a voltage is applied to the gate and a current is supplied to both the source and drain, an electric field is generated across the channel. This electric field modulates the charge carriers present in the N-type channel, allowing current to flow from the source to the drain.

The flow of charge carriers between the source and the drain causes an electrostatic field which is affected by the voltage applied to the gate. This in turn affects the current flow between the source and drain. By varying the applied gate voltage, the current between the source and drain can be varied from zero (OFF) to a maximum (ON), allowing the device to function as an amplifier, switch or mixer.

The 2N5484_D26Z requires very little input power and can operate over a large temperature range, making it an ideal device for high-power applications requiring maximum gain, efficiency and reliability. In addition, the device is immune to temperature changes and can be used in extreme weather conditions. This makes it suitable for use in various commercial and consumer applications, including mobile phones, satellite communications, wireless data communication, and other consumer electronics.

Overall, the advantages of the 2N5484_D26Z FET are its wide frequency range and low noise levels. This makes it ideal for use in high-power radio frequency applications where low noise performance is paramount. Additionally, its immunity to temperature changes make it a practical choice for use in a wide range of consumer-rated consumer electronics.

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