2N5486_D74Z

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	N-Channel JFET
Frequency:	400MHz
Gain:	--
Voltage - Test:	15V
Current Rating:	20mA
Noise Figure:	4dB
Power - Output:	--
Voltage - Rated:	25V
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	2N5486

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Introduction

The 2N5486_D74Z is a FET (field effect transistor) largely used in radio frequency (RF) applications. The RF FETs are an important tool in making radio waves amplification possible in consistent, stable and efficient way. Being a type of transistor, FETs are built with semiconductor material and designed to control current between two terminals (source and destination) by using an electric field. In the case of FETs used in radio frequency applications, their gate (control terminal) effectively acts as a switch between the source and destination. This specific FET (2N5486_D74Z) is N-type, which means that the source electrode is connected to the source of the transistor, and the drain electrode is connected to the drain of the transistor.

Application Field

The 2N5486_D74Z is mainly used in applications that require stable, wide band amplifiers. The principal application fields of this FET are:

• Wireless data communication
• RF Amplifiers
• Radar systems
• Cellular phones
• Satellite communication systems

These are applications that require fast, reliable, high-frequency amplification, typically in the gigahertz range. The 2N5486_D74Z is designed for use in these high-performance applications and provides better features than some of the other devices used in these applications.

Working Principle

A FET is a device that amplifies power when it is operated on a signal of a certain frequency. In the case of the 2N5486_D74Z, the gate (control terminal) of the FET is connected to a signal source. The signal source maintains the appropriate voltage to keep the drain (output) electrode of the FET at the desired voltage level.In this configuration, when a signal is applied to the gate electrode, the FET gives an amplified signal at the drain electrode. This amplifier will result in an amplified signal with a gain proportional to the input signal frequency. The lower the frequency, the greater the gain, and the higher the frequency, the lower the gain.The 2N5486_D74Z has an architecture that enables it to provide stability over wide frequency ranges. This allows it to provide superior performance in RF applications, where it is important for the amplifier to maintain optimal amplification characteristics even at higher frequencies.

Conclusion

The 2N5486_D74Z FET is a versatile and powerful device used in radio frequency applications. It can provide a higher gain than other devices and is stable in a wide frequency range, making it particularly suitable for applications such as wireless data communication and radar systems. This FET also provides superior performance when compared to other FETs used in RF applications.

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