2N6667

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2N6667 is a single transistor type of bipolar junction transistor (BJT), which is classified as medium-power device suitable for many applications in general-purpose switching and amplification.

The 2N6667 comes in a hermetically sealed TO-3 package, making it highly rugged and allowing it to withstand a wide range of temperatures while providing long-term reliability and stability. The 2N6667 features a Collector-Base Breakdown Voltage of 160V, an Emitter-Base Breakdown Voltage of 5V and a Collector-Emitter saturation voltage of around 2V. With an Operating Junction Temperature of up to 170℃, eight different current ratings, and a wide temperature range, the 2N6667 is suitable for a range of applications.

Application Field

The 2N6667 is a robust, reliable, and economical switching transistor. With its low saturation voltage and high current ratings, the 2N6667 is suitable for a range of power switching and amplification applications. The 2N6667 is also suitable for applications such as relay drivers, solenoid drivers, DC motor drivers, and speed control of shaded pole motors. It can also be used as a power switch in low power audio amplifiers. When used as a Darlington transistor, the 2N6667 can be used as an analog switch or a driver for TTL logic gates. The 2N6667 can also be used as a DC to DC converter, providing regulation from 0.5V to 35V.

Working Principle

As a silicon-based BJT, the 2N6667 is designed to operate on a four-layer p-n-p-n structure. Its structures enables it to operate in either the n-p-n mode (with the current flowing from the Collector to the Emitter) or p-n-p mode (with the current flowing from the Emitter to the Collector) depending on the applied voltage. The maximum Collector current and Base current of the 2N6667 are specified by the manufacturer. It has a current gain of up to 250 in the forward active region.

When the Base-Emitter junction is forward biased, electrons move from the Emitter to the Base, creating a region of low resistance. This allows current to flow through the Collector-Emitter junction which is also forward biased. The voltage at the Collector is given by the difference of the Base-Emitter voltage and the Collector-Emitter Voltage, with the Collector-Emitter Voltage being the controlling parameter. If a negative voltage is applied to the Collector-Emitter junction, the transistor will enter the cut-off region, preventing current from flowing through the junction. This will cause the Collector-Emitter Voltage to drop to near 0 Volts.

The Base current, Ib, controls the Collector current, Ic. The gain of the transistor is given by the ratio between the Collector and the Base current, commonly referred to as the h_fe, or Beta. The Beta of the 2N6667 can be in the range of 250 with the Effects and Distributions. Finally, the 2N6667 can also be used as a switch to open or close circuits, where a small current applied to the Base will control a larger current at the Collector.

In summation, the 2N6667 is a robust and reliable medium-power transistor with a wide range of applications in switching and amplification. Its low saturation voltage and high current ratings make it suitable for a variety of applications. Its wide temperature range and hermetically sealed package make it suitable for applications where high reliability and stability are desired.

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