Allicdata Part #: | 2N6660-2-ND |
Manufacturer Part#: |
2N6660-2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 0.99A TO-205 |
More Detail: | N-Channel 60V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Th... |
DataSheet: | 2N6660-2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: | TO-205AD (TO-39) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 725mW (Ta), 6.25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 990mA (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The 2N6660-2 is a single field-effect transistor (FET) designed specifically to be used in a wide range of applications. It is a wide-band transistor, meaning it can be used in a variety of high-frequency applications such as amplifier circuits, signal switching and signal generation. It is also capable of being driven by high-current and low-frequency signals.
This FET has a wide variety of advantageous features compared to other transistors of its type. These include higher power dissipation, higher switching speed, better cross-over distortion and improved device reliability. It is also capable of operating at temperatures up to 125°C without suffering any reduction in performance.
The 2N6660-2\'s working principle is fairly simple. The device consists of a source, a drain, and a gate terminal. When the gate terminal receives an electric signal, it causes a change in the electrical charge that can be measured by the source and drain terminals. This change in electric charge is applied to the output device, typically an amplifier, and is then further amplified and used as the desired output.
In terms of use, the 2N6660-2 can be used for RF and microwave amplifiers, power amplifiers, power switching, signal switching, signal generation, surge protection and dynamic clocking. It can also be used to provide input and output port isolation in data processing and display applications. In multifunction applications, the 2N6660-2 can be used to provide the switching between the various functionalities, while maintaining both stability and reliability.
The 2N6660-2 has several advantages over other types of transistors. It is highly resistant to static electricity, also known as ESD, and can operate over a wide temperature range. It is also capable of operating with very high power cycles, is well-suited for fast switching, and can be used for high-voltage applications. Additionally, it has the lowest on-resistance of any device in its class and is rated for up to 50V.
The 2N6660-2 is an excellent choice for a variety of applications. It is highly reliable, offers excellent switching performance and is capable of operating in a wide range of temperatures. It is also capable of handling high-frequency and high-current applications with ease, making it a great choice for those who are looking for a versatile transistor.
The specific data is subject to PDF, and the above content is for reference
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