Allicdata Part #: | 2N6676-ND |
Manufacturer Part#: |
2N6676 |
Price: | $ 75.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | PNP TRANSISTOR |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | 2N6676 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 68.97240 |
Series: | * |
Part Status: | Active |
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2N6676 is a type of bipolar junction transistor (BJT). They are available in single or dual package and application fields such as interface systems and communication systems. A single 2N6676 contains a single BJT, with three pins for input, output, and GND (for ground) connection.
In terms of working principle, a BJT is a current controlled device, which means that it is controlled by a current input, not a voltage input. The current input is what is known as base current. The base current controls the amount of current that flows from the collector to the emitter. When the base current is increased, the amount of collector-emitter current increases, and the output voltage drops.
A single 2N6676 is ideal for amplifying small signals and switching, as well as high current applications. Due to its small size and low power consumption, it is perfect for interfacing and communication systems. The 2N6676 also exhibits low distortion and low noise operation, which makes it ideal for many types of applications.
The single 2N6676 has a wide range of applications, from consumer electronics, such as televisions and DVD players, to industrial equipment, such as in communication systems. Other applications include power switching and driving, audio amplifiers, amplifiers for radio receivers, and voltage regulators.
The 2N6676 is especially useful for low-power applications, as it is able to operate at very low power levels. This makes it ideal for applications where current draw is an issue, such as regulated power supplies or battery operated devices. The 2N6676 also has low-power features such as reduced on-state power dissipation, low saturation voltage, and low temperature rise.
The 2N6676 is designed to provide high output current and high power capability, while still offering low power consumption. Its collector-base breakdown voltage is also high, which makes it suitable for high voltage applications. Its low power consumption, low cost, and small size also make it ideal for interfacing and communication systems.
In summary, the 2N6676 is a single bipolar junction transistor (BJT) with wide application fields such as interface systems and low-power applications. It works based on current control, relying on the base current to control the amount of current flowing from the collector to the emitter. The 2N6676 has a wide range of applications, from consumer electronics to high voltage industrial applications. It exhibits low power consumption, low cost, and small size, making it ideal for many different types of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
2N6668 | STMicroelect... | 0.0 $ | 1000 | TRANS PNP DARL 80V 10A TO... |
2N6667 | ON Semicondu... | -- | 1000 | TRANS PNP DARL 60V 10A TO... |
2N6660-2 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
2N6660-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 990MA TO-... |
2N6660JTVP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
2N6660JTX02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
2N6660JTXL02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
2N6660JTXP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
2N6660JTXV02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
2N6661-2 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6661-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6661JAN02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6661JTVP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6661JTX02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6661JTXL02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6661JTXP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6661JTXV02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6671 | Microsemi Co... | 0.0 $ | 1000 | TRANS PNP 300V 8A TO-3Bip... |
2N6661 | Microchip Te... | -- | 2256 | MOSFET N-CH 90V 350MA 3TO... |
2N6660JAN02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET JFET N-CHJFET |
2N6648 | Microsemi Co... | 57.72 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6649 | Microsemi Co... | 57.72 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6650 | Microsemi Co... | 57.72 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6672 | Microsemi Co... | 57.72 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6673 | Microsemi Co... | -- | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6674 | Microsemi Co... | 75.87 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6675 | Microsemi Co... | 75.87 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6676 | Microsemi Co... | 75.87 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6677 | Microsemi Co... | 75.87 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6678 | Microsemi Co... | -- | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6678T1 | Microsemi Co... | 173.73 $ | 1000 | NPN TRANSISTORBipolar (BJ... |
2N6660 | Microchip Te... | 21.34 $ | 1148 | MOSFET N-CH 60V 0.41A TO3... |
2N6667G | ON Semicondu... | 0.62 $ | 2166 | TRANS PNP DARL 60V 10A TO... |
2N6609 | Central Semi... | -- | 50 | TRANS PNP 140V 16A TO3Bip... |
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