2N6660JTX02

Vgs(th) (Max) @ Id:	2V @ 1mA
Package / Case:	TO-205AD, TO-39-3 Metal Can
Supplier Device Package:	TO-205AD (TO-39)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	725mW (Ta), 6.25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	50pF @ 25V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	3 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	990mA (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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2N6660JTX02 Application Field and Working Principle2N6660JTX02 is a type of power transistor created by Central Semiconductor which uses MOSFET technology. It is a depletion-mode depletion-type metal-oxide-semiconductor field-effect transistor (MOSFET), which is usually used for power applications that require high current gain, high efficiency, and high switching speeds. This transistor is suitable for use in a variety of applications, particularly in solid-state drives, monitoring applications, and high-temperature applications. This article will discuss the application field and working principles of the 2N6660JTX02.Application Field of 2N6660JTX02The 2N6660JTX02 has many possible applications, but it is most commonly used as a power switch in solid-state drives (SSDs). Its features make it ideal for this type of task. It is capable of providing high current gain, high efficiency, and high switching speeds, which makes it an excellent choice for SSDs. In addition, the transistor can operate at temperatures up to 150°C, which makes it suitable for high-temperature applications.The 2N6660JTX02 is also suitable for use in monitoring applications, as it can provide an accurate measure of the power switch status. This makes it ideal for use in systems that require real-time monitoring of the power switching status. Furthermore, the transistor can also be used in power-supplies and power-management systems, where it ensures stable power delivery.Working Principle of 2N6660JTX02The 2N6660JTX02 transistor is a type of power transistor that uses MOSFET technology. MOSFET stands for “metal-oxide-semiconductor field-effect transistor”, which is a type of transistor that uses metal-oxide-semiconductor (MOS) technology. In principle, MOSFETs function by controlling the electric field that exists between a metal and a semiconductor, allowing for the manipulation of electric charge. The 2N6660JTX02 transistor operates through the use of the metal-oxide-semiconductor field-effect transistor (MOSFET) principle. It is a particularly useful type of transistor as it can provide high current gain, high efficiency, and high switching speeds. It also offers improved stability and reliability in comparison to bipolar transistors. The 2N6660JTX02 is a depletion-mode depletion-type transistor, meaning that the transistor is always “on” and requires a negative voltage to be applied to it to turn it “off”. This is the opposite to a depletion-type transistor, where a positive voltage is applied to turn it “on”. By using this principle, it is possible to control the electric field that exists between the metal and the semiconductor, allowing for the manipulation of electric charge.ConclusionIn conclusion, the 2N6660JTX02 is a type of power transistor that uses MOSFET technology to offer high current gain, high efficiency, and high switching speeds. It also has excellent stability and reliability, making it suitable for use in a variety of applications, such as in solid-state drives, monitoring applications, and high-temperature applications. Its working principle relies on the metal-oxide-semiconductor field-effect transistor (MOSFET) principle, which can provide significant control over the electric field that exists between a metal and a semiconductor, allowing for the manipulation of electric charge.

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