Allicdata Part #: | 2N6660JTXL02-ND |
Manufacturer Part#: |
2N6660JTXL02 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 0.99A TO-205 |
More Detail: | N-Channel 60V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Th... |
DataSheet: | 2N6660JTXL02 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: | TO-205AD (TO-39) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 725mW (Ta), 6.25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 990mA (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The 2N6660JTXL02 is a complex transistor device, which combines some of the features of both field-effect transistors (FETs) and metal-oxide-semiconductor field-effect transistors (MOSFETs). The device is widely used for power applications, and is able to provide a range of advantages over traditional transistors and FETs.
To understand how the 2N6660JTXL02 works, it is important to first familiarize yourself with the principles of operation of FETs and MOSFETs. FETs are transistors that operate by allowing an electric current to flow between two points, while a MOSFET is a type of transistor which relies on a relatively thin oxide layer to help control current flow.
The 2N6660JTXL02 combines these two principles of operation in order to form a single device which is able to provide improved performance. The device contains two tiny metal-oxide-semiconductor transistor layers, which are separated from one another by a thin oxide layer. This enables the device to control the flow of electricity more precisely, resulting in improved efficiency and power handling capabilities.
The 2N6660JTXL02 is typically used for power applications such as in motor drives, audio amplifiers, and other electronic devices that require high performance and reliability. It is also suitable for use as an RF amplifier. The device\'s small size also makes it desirable for applications where space is at a premium.
As with all transistors, the 2N6660JTXL02\'s performance will depend on how efficiently it is designed and implemented. Therefore, it is important to consult with the manufacturer in order to ensure the best design possible. This will result in improved performance and reliability and ensure that the device operates as expected.
The 2N6660JTXL02 is capable of providing significant benefits in power applications due to its combination of FET and MOSFET features. Its high speed and efficiency make it ideal for a wide variety of circuit designs, while its small size makes it ideal for applications where space is limited. Furthermore, its high performance, reliability, and low cost make it an attractive choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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