2N6668 Discrete Semiconductor Products |
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Allicdata Part #: | 497-2535-5-ND |
Manufacturer Part#: |
2N6668 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS PNP DARL 80V 10A TO-220 |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 80V 10A ... |
DataSheet: | 2N6668 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 100mA, 10A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 5A, 3V |
Power - Max: | 65W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Base Part Number: | 2N6668 |
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2N6668 transistors are classified as single bipolar junction transistors (BJT).The 2N6668 transistor is a general purpose discrete NPN transistor designed for power switching applications. It is made with a PN-junction structure, using a small-signal and low frequency transistor with a gain of up to 1000. It three terminals, the collector, base and emitter, and the collector current is decided by the base current.
The 2N6668 transistor is made of silicon, which is a semi-conductor material, and has a maximum current of 1A and a maximum power of 500mW. It features Gold Metallization System(GMS), a process that enables higher performance transistors by effectively reducing the thermal resistance between the bit of transistors and the package lead. This enables the transistor to have a better temperature stability, a higher output current and a better reliablity.
The collector-to-emitter voltage drop is 2.5V at 0.1A, the collector-to-base voltage is 5V and the emitter-to-base voltage is 1.5V. It is also characterized by high-current gain, good linearity and fast switching speed. The maximum collector and emitter axial current is 1A and the maximum ambient temperature is 125°C.
2N6668 transistor is widely used in a number of different electronic applications. It is commonly used as a switch in various power circuits and a power amplifier in audio applications. It is also frequently used as an oscillator to create pulse signals and as a voltage regulator. 2N6668 transistor is also popularly used in digital circuits as a logic inverter, for logic gates and for logic controller applications.
The working principle of 2N6668 transistor is based on the semiconductor effect. The transistor operates with two diodes, a collector-to-base terminal and an emitter-to-base terminal, connected in series. The current flow from one terminal to the other is controlled by a small base current flowing between the three terminals. When a small base current is applied, a large current, proportional to the base current, will flow from the collector to the emitter. This process, called amplification, is the central function of a transistor.
2N6668 transistors are used in a variety of power switching applications. For example, they can be used in power controllers and inverters to control the flow of current through the circuit, or they can be used to switch high or low power devices on and off. In addition, they can be used as high current drivers, voltage regulators or drivers for DC motors. They are also commonly used in audio amplifiers to produce high power levels.
2N6668 transistors are incredibly versatile and can be used in a wide variety of electronic circuits. They are often preferred over other types of transistors due to their low power consumption, good linearity, high-current gain and fast switching speed. It is an excellent choice for a range of power switching applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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2N6668 | STMicroelect... | 0.0 $ | 1000 | TRANS PNP DARL 80V 10A TO... |
2N6667 | ON Semicondu... | -- | 1000 | TRANS PNP DARL 60V 10A TO... |
2N6660-2 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
2N6660-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 990MA TO-... |
2N6660JTVP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
2N6660JTX02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
2N6660JTXL02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
2N6660JTXP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
2N6660JTXV02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
2N6661-2 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6661-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6661JAN02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6661JTVP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6661JTX02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6661JTXL02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6661JTXP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6661JTXV02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6671 | Microsemi Co... | 0.0 $ | 1000 | TRANS PNP 300V 8A TO-3Bip... |
2N6661 | Microchip Te... | -- | 2256 | MOSFET N-CH 90V 350MA 3TO... |
2N6660JAN02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET JFET N-CHJFET |
2N6648 | Microsemi Co... | 57.72 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6649 | Microsemi Co... | 57.72 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6650 | Microsemi Co... | 57.72 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6672 | Microsemi Co... | 57.72 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6673 | Microsemi Co... | -- | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6674 | Microsemi Co... | 75.87 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6675 | Microsemi Co... | 75.87 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6676 | Microsemi Co... | 75.87 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6677 | Microsemi Co... | 75.87 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6678 | Microsemi Co... | -- | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6678T1 | Microsemi Co... | 173.73 $ | 1000 | NPN TRANSISTORBipolar (BJ... |
2N6660 | Microchip Te... | 21.34 $ | 1148 | MOSFET N-CH 60V 0.41A TO3... |
2N6667G | ON Semicondu... | 0.62 $ | 2166 | TRANS PNP DARL 60V 10A TO... |
2N6609 | Central Semi... | -- | 50 | TRANS PNP 140V 16A TO3Bip... |
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