2N6672

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The 2N6672 is a type of transistor that belongs to the category of bipolar junction transistors (BJT) or a single device. It is a NPN silicon transistor that is designed for use in switching, driver and amplifier applications. This device can handle power levels of up to 200 mW with a collector-emitter voltage of 30 Volts.

In circuit design, the 2N6672 is typically used in preamp, line driver and amplifier applications. This device can also be employed in switching applications, such as with power supplies, relay and motor control, as well as for switching between different sources, for example between a solar panel and battery. Due to its low collector capacitance, it is suitable for use in high-speed switching circuits.

In terms of structure, the 2N6672 is made of silicon and has a planar process, which means that all of its components are on a single chip, allowing for better integration and miniaturization. It is housed in a dual-in-line package, which is a cost effective solution when compared to other packages. Additionally, it features a hermetically sealed package, ensuring the components remain isolated and protected.

The 2N6672 has three terminals: the emitter, base, and collector, which are essential components in any BJT transistor operation. In terms of action, it is based on the mechanism of minority carriers where the majority carriers are holes and the minority carriers are electrons and the operation of the device mainly consists of the minority carriers moving from the emitter towards the base and collector junction.

This device is able to provide a gain of up to 2500, depending on the base current. This gain is a result of the BJT\'s current amplification property, wherein the output current is larger than the input current. This is achieved by providing a suitable base current to the 2N6672, which will then be amplified in its output current.

In terms of the electrical characteristics of the 2N6672, it has a Collector-Emitter Voltage of 30 Volts and a Collector-Base Voltage of 40 Volts. It has a Collector-Emitter Saturation voltage of 0.4 V at 10mA, an fT of 6.5 MHz and a capacitance of 280 pF. Its dissipation power is 0.2W and it also has a gain spec of 250 to 1500, again depending on the current.

The two other main characteristics in this device are the breakdown voltage and the reverse leakage current. The breakdown voltage is typically 10 Volts while the reverse leakage current is 2nA. All of the above characteristics make it suitable for a wide range of applications.

In addition, the 2N6672 is also quite versatile when it comes to its applications in different systems or circuits. It is a common choice for applications that require current gain, such as preamplifiers, signal processors, and filters. The device is also often used as a switched amplifier, capable of switching signal between two sources or gain stages. It is also used in circuits as an isolator, which allows one part of a circuit to be electrically isolated from the other, such as in motor control or power supply applications.

In summary, the 2N6672 is a type of bipolar junction transistor (BJT) that is designed for use in many different applications. It has three terminals, which work together to obtain current gain and operate based on the principle of minority carrier movement. It is typically used as preamplifiers, signal processors, isolators, switched amplifiers, and also for motor control, power supply and switching applications. It has a wide range of electrical characteristics and its versatility makes it a commonly used device in many different types of circuits.

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