
Allicdata Part #: | 2N6673-ND |
Manufacturer Part#: |
2N6673 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | PNP TRANSISTOR |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | * |
Part Status: | Active |
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The 2N6673 is a type of bipolar junction transistor (BJT). It is categorized as a single transistor and typically features an NPN or PNP construction. The device has three terminals: the base, the collector, and the emitter. It is a type of switching transistor and is typically used as a switch or amplifier. While it may be suitable for low-power applications, it is not usually appropriate for higher power operations.
The 2N6673 is designed for use in low frequency and switching circuit applications. It has a maximum collector current of six amperes and a maximum collector-emitter voltage and collector-base voltage of 800 volts and 1,000 volts, respectively. The collector-emitter saturation voltage (Vce(sat)) of 0.2 volts and the base-emitter saturation voltage (Vbe(sat)) of 0.8 volts make it suitable for use in low-current applications. The 2N6673 features a high current gain (hfe) of 50 to 200, enabling it to amplify low input signals. It also features a low power dissipation and heat generation, along with a good thermal stability and low distortion.
The working principle of the 2N6673 is based on the basic principles of the BJT. An electric current entering the base is used to create a current between the collector and the emitter. When the base current is increased, more current is allowed to flow from the collector to the emitter. This, in turn, allows more current to flow from the collector to the base. When the base current is decreased, less current flows from the collector to the emitter. This, in turn, allows less current to flow from the collector to the base.
The application field of the 2N6673 can vary depending on the circuit in which it is used. Common applications include amplifiers, signal switching, AF switches, protection circuits, and other low frequency applications. It is used in a variety of circuits, including transistor radios, outboard motor controllers, automatic gate openers, and telephone circuits. The transistor can also be used as an amplifier in light dimmer designs.
The 2N6673 is a low-power, high-current bipolar transistor that is ideal for use in many low frequency switching and amplifying applications. Its versatility makes it suitable for use in a wide variety of circuits, including amplifiers, signal switching, andprotection circuits. The device features three terminals: thebase, the collector, and the emitter. It is designed to providehigh current gain and low power dissipation and heat generation. Its low saturation voltages and high current gain make it wellsuited for use in low-power, high-current applications.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
2N6660JTXL02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
2N6668 | STMicroelect... | 0.0 $ | 1000 | TRANS PNP DARL 80V 10A TO... |
2N6678T1 | Microsemi Co... | 173.73 $ | 1000 | NPN TRANSISTORBipolar (BJ... |
2N6672 | Microsemi Co... | 57.72 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6661JAN02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6661JTXV02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6660JTXV02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
2N6671 | Microsemi Co... | 0.0 $ | 1000 | TRANS PNP 300V 8A TO-3Bip... |
2N6649 | Microsemi Co... | 57.72 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6676 | Microsemi Co... | 75.87 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6677 | Microsemi Co... | 75.87 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6661-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6609 | Central Semi... | -- | 50 | TRANS PNP 140V 16A TO3Bip... |
2N6661JTX02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6660 | Microchip Te... | 21.34 $ | 1148 | MOSFET N-CH 60V 0.41A TO3... |
2N6661-2 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6661JTXP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6660-2 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
2N6660JTX02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
2N6678 | Microsemi Co... | -- | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6660JTXP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
2N6667 | ON Semicondu... | -- | 1000 | TRANS PNP DARL 60V 10A TO... |
2N6661JTVP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6648 | Microsemi Co... | 57.72 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6660JTVP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
2N6650 | Microsemi Co... | 57.72 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6661 | Microchip Te... | -- | 2256 | MOSFET N-CH 90V 350MA 3TO... |
2N6667G | ON Semicondu... | 0.62 $ | 2166 | TRANS PNP DARL 60V 10A TO... |
2N6674 | Microsemi Co... | 75.87 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6673 | Microsemi Co... | -- | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6660JAN02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET JFET N-CHJFET |
2N6661JTXL02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
2N6675 | Microsemi Co... | 75.87 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
2N6660-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 990MA TO-... |
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