2N6660 Discrete Semiconductor Products |
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| Allicdata Part #: | 2N6660MC-ND |
| Manufacturer Part#: |
2N6660 |
| Price: | $ 21.34 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microchip Technology |
| Short Description: | MOSFET N-CH 60V 0.41A TO39-3N-Channel 60V 410mA (T... |
| More Detail: | N/A |
| DataSheet: | 2N6660 Datasheet/PDF |
| Quantity: | 1148 |
| 1 +: | $ 21.34000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 410mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Power - Max: | -- |
| Gate Charge (Qg) (Max) @ Vgs: | -- |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 24V |
| FET Feature: | -- |
| Power Dissipation (Max): | 6.25W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-39 |
| Package / Case: | TO-205AD, TO-39-3 Metal Can |
| Base Part Number: | -- |
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2N6660 transistors, also commonly known as a lateral power MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) are widely used in the commercial, industrial and automotive electronics market. These vertical DMOS FETs (Field Effect Transistors) are manufactured by using planar, lateral N channel Multi-Tech processes. The 2N6660 transistors are the perfect choice of the users who are looking for robust products which offer low on-state resistance and fast switching times.
The 2N6660 transistors belong to the family of vertical DMOS FETs which is well known for its robust performance and reliability. These transistors have been designed with a planar interconnect technology making them suitable for high-power applications. They are well equipped with very low on-state resistance which is better than that of most transistors of the same range. With an on resistance of 10 mΩ (maximum), they offer high performance in comparison to other similar products. Their switching speeds are more than 12 ns typical making them perfect for pulse applications.
These transistors are extensively used in automotive electronics due to their excellent performance and reliability. They are used to provide a low-loss, non polar switching path in order to control cooling fan motor over temperature switch, automotive lamps, and DC motor applications. They can be used in the power-switching stages of many electronic circuits such as audio amplifiers and preamplifiers control systems. The 2N6660 transistors are also used for power supply application as a power switch circuit, DC motors, and HVAC (Heating Ventilation and Air-conditioning) applications.
The 2N6660 transistors work on the principle of MOSFET (Metal Oxide Semiconductor Field Effect Transistor). MOSFETs are three-terminal devices composed of a source, a drain, and a gate. In 2N6660 transistors, the source and the drain act as the current controlling element while the gate acts as the voltage controlling element. In such MOSFET transistors, the current is controlled by the voltage applied to the gate. When a positive voltage is applied to the gate of the 2N6660 transistor, it will turn on, resulting in a flow of the current between the source and the drain. When the voltage is removed, the transistor will turn off and the current flow will be interrupted.
The 2N6660 transistors are known for their low power consumption, several power handling abilities, low noise, and reliability. They are highly stable components that are capable of working at higher temperatures. They are also very cost-effective and easy to use, making them an ideal choice for many applications.
In conclusion, the 2N6660 transistors are one of the most versatile devices for any electronic system that requires switching. They offer excellent performance, reliability, and low-resistance characteristics. These powerful transistors are widely used in a variety of applications such as automotive electronics, audio amplifiers and preamplifiers control systems, and HVAC systems.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 2N6660JTXP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
| 2N6667 | ON Semicondu... | -- | 1000 | TRANS PNP DARL 60V 10A TO... |
| 2N6673 | Microsemi Co... | -- | 1000 | PNP TRANSISTORBipolar (BJ... |
| 2N6660JAN02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET JFET N-CHJFET |
| 2N6678 | Microsemi Co... | -- | 1000 | PNP TRANSISTORBipolar (BJ... |
| 2N6661JTVP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
| 2N6667G | ON Semicondu... | 0.62 $ | 2166 | TRANS PNP DARL 60V 10A TO... |
| 2N6660JTXL02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
| 2N6661JTXL02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
| 2N6661JTXP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
| 2N6660JTX02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
| 2N6648 | Microsemi Co... | 57.72 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
| 2N6668 | STMicroelect... | 0.0 $ | 1000 | TRANS PNP DARL 80V 10A TO... |
| 2N6676 | Microsemi Co... | 75.87 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
| 2N6650 | Microsemi Co... | 57.72 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
| 2N6672 | Microsemi Co... | 57.72 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
| 2N6674 | Microsemi Co... | 75.87 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
| 2N6661 | Microchip Te... | -- | 2256 | MOSFET N-CH 90V 350MA 3TO... |
| 2N6678T1 | Microsemi Co... | 173.73 $ | 1000 | NPN TRANSISTORBipolar (BJ... |
| 2N6677 | Microsemi Co... | 75.87 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
| 2N6609 | Central Semi... | -- | 50 | TRANS PNP 140V 16A TO3Bip... |
| 2N6661-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
| 2N6661JTX02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
| 2N6660 | Microchip Te... | 21.34 $ | 1148 | MOSFET N-CH 60V 0.41A TO3... |
| 2N6661-2 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
| 2N6661JTXV02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
| 2N6675 | Microsemi Co... | 75.87 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
| 2N6660-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 990MA TO-... |
| 2N6649 | Microsemi Co... | 57.72 $ | 1000 | PNP TRANSISTORBipolar (BJ... |
| 2N6660-2 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
| 2N6671 | Microsemi Co... | 0.0 $ | 1000 | TRANS PNP 300V 8A TO-3Bip... |
| 2N6660JTXV02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
| 2N6660JTVP02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.99A TO-... |
| 2N6661JAN02 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 90V 0.86A TO-... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
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2N6660 Datasheet/PDF