2N6660JTVP02

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N6660JTVP02 MOSFET is a high-performance device designed for power switching and voltage switching applications. It provides superior on-resistance and low gate threshold voltage (<2V) for improved system efficiency. The 2N6660JTVP02 is made up of an N-Channel MOSFET and a P-Channel MOSFET in an SOIC package. The device is designed for operation in a wide range of temperatures (-55°C to +150°C).

The 2N6660JTVP02 device is a combination of two single-gate MOSFETs in a single package, which makes it ideal for power switching and voltage level shifting. It has high current handling capability of 8A and an on-resistance (RDS on) of 7.5mΩ. This specific unit also has an ultra-low off-leakage current of 120nA. It is designed to be used in tight power applications such as voltage level shifting, power amplifiers, or even automotive applications.

The 2N6660JTVP02 has several advantages compared to other single-gate MOSFETs. Firstly, it has an integrated gate resistor, which prevents ESD problems and provides improved system reliability. Additionally, the device has an integrated diode base-emitter (IPB) protection, which ensures that the FET remains off in the event of a short circuit. This makes it suitable for use in high-voltage applications. Finally, the device has low gate threshold voltage, which reduces switching times and improves reliability.

The working principle of the 2N6660JTVP02 device is based on the bipolar junction transistor (BJT) structure. BJT is a three-terminal semiconductor device which consists of two p-type material separated by an n-type material. The voltage applied to the gate of the 2N6660JTVP02 controls the current flowing between the drain and the source terminals (D and S). When the gate voltage is applied, the 2N6660JTVP02 turns on, allowing current to flow from the drain to the source. The resistance between the drain and the source (RDS on) determines the amount of current that can flow.

The 2N6660JTVP02 device is used in a variety of applications due to its high performance and reliability. It is ideal for in-circuit switching, voltage level shifting, power amplifiers, and other electronic systems. It is also used in automotive applications, providing improved system efficiency and reliability.

In conclusion, the 2N6660JTVP02 is a high-performance single-gate MOSFET which is designed for power switching and voltage level applications. It has an integrated gate resistor, an integrated diode base-emitter for improved system reliability, and a low gate threshold voltage for reduced switching times. The device is suitable for use in tight power applications and automotive systems.

The specific data is subject to PDF, and the above content is for reference