| Allicdata Part #: | 2N6661JTVP02-ND |
| Manufacturer Part#: |
2N6661JTVP02 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 90V 0.86A TO-205 |
| More Detail: | N-Channel 90V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Th... |
| DataSheet: |  2N6661JTVP02 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Package / Case: | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package: | TO-39 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 725mW (Ta), 6.25W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
| Vgs (Max): | ±20V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 4 Ohm @ 1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 860mA (Tc) |
| Drain to Source Voltage (Vdss): | 90V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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2N6661JTVP02 is a high power transistor typically used in H-bridge switching drivers, motor controllers, pulse transformers, and power supplies. It is a dual N-channel JFET, with a 3.2A drain current and a maximum voltage of 30V. It has an insulated gate and a relatively simple construction. It is well suited for applications with high switching frequencies, high speed switching and controlled current commutation.
2N6661JTVP02 Application Field
2N6661JTVP02 is usually found in circuits with low current and low power requirements. This make it suitable for power electronics applications such as H-bridge drivers, motor controllers, chopping circuits, and switching power supplies. Its insulated gate prevents the uncontrolled gate current which is common in MOSFETs, so it is well suited for motor control and pulse transformer applications. The high switching frequency and controlled current commutation also makes it suitable for circuits with high speed switching. These characteristics also make it suitable for some relatively high power supplies, especially in applications that require power in the tens of watts range.2N6661JTVP02 Working Principle
The operation of 2N6661JTVP02 is based on junction field effect transistor (JFET) technology. A JFET is a type of transistor in which the main current carrier is an electron, or negative charge. The main current carriers are formed into a channel by creating a depletion region. When the gate voltage is applied, the depletion region narrows, allowing current to flow through the channel. Because 2N6661JTVP02 has an insulated gate, the gate voltage has no effect on the source voltage of the FET. This makes it an ideal choice for applications where a voltage source is required but where the resistance to the gate may fluctuate. Additionally, the insulated gate allows for a low input capacitance, which is useful in high frequency switching applications.The terminals of 2N6661JTVP02 can be referred to as the drain (D), the source (S), and the gate (G). The gate voltage is applied to the gate of the FET, and this controls the flow of current from the drain to the source. The drain and source of the FET are connected to an external circuit, and this circuit is used to control and sense the current flow.When the switch is turned on, the current flow through the channel of the FET increases and the drain voltage decreases. When the switch is turned off, the current flow stops and the drain voltage increases. This process is known as saturation, wherein the FET is in its active region and the current is flowing.Conclusion
The 2N6661JTVP02 is a powerful transistor typically used in H-bridge switching systems, motor controllers, pulse transformers, and power supplies. It is a dual N-channel JFET that features an insulated gate, low input capacitance, and controlled current commutation. It is suitable for applications with high switching frequencies, high speed switching, and relatively low power requirements.The specific data is subject to PDF, and the above content is for reference
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