2N6678 Allicdata Electronics
Allicdata Part #:

2N6678-ND

Manufacturer Part#:

2N6678

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: PNP TRANSISTOR
More Detail: Bipolar (BJT) Transistor
DataSheet: 2N6678 datasheet2N6678 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: *
Part Status: Active
Description

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2N6678 is a bipolar transistor that belongs to the Single families and is widely used in a variety of applications. This transistor has a collector-emitter voltage of 55V and a peak collector-base current of 40A. It can operate at frequencies up to 200MHz. This type of transistor is ideal for use in low-power, linear, small-signal and audio circuit designs.

The application field of the 2N6678 transistor is very wide and can be found in different electronics projects. It is especially suitable for switching applications, amplifier circuits, and small audio circuits. It is often used in audio amplifiers to provide gain in small-signal amplifiers and is also well-suited for low-power operating amplifiers and audio output bases. In addition, its collector-emitter voltage and collector-base current make it suitable for applications such as power switching circuits and power regulators.

The working principle of the 2N6678 transistor is based on electron transport. In the transistor, there are two types of semiconductor material. One material is called the emitter and the other is referred to as the collector. Electrons are injected into the emitter and form a current flow between the emitter and collector. A reverse bias is applied to the emitter-base junction causing the electrons to be attracted to the base material. Meanwhile, a forward bias is applied to the collector-base junction which causes the electrons to be drawn towards the collector material. This transport of electrons is what is referred to as electron transport.

In addition to electron transport, the 2N6678 transistor also uses hole-transport. In this process, holes (positive charge) are injected into the collector and a forward voltage is applied across the base-collector junction. The holes are then attracted to the base material and travel through the transistor in the same way as electrons. Both types of transport can be used together to form a complete process which is known as bipolar junction transistor or BJT.

The 2N6678 transistor is a versatile device and can be used in a wide range of applications. It operates at low currents, making it an ideal choice for low power and low noise applications. Furthermore, it is well-suited for frequency and power applications, making it an ideal choice for a wide range of electronics projects. Its combination of high current and low voltage capability makes it suitable for a variety of applications and effectively adds versatility to its range of uses.

The specific data is subject to PDF, and the above content is for reference

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