2SA1020-O,F(J Allicdata Electronics
Allicdata Part #:

2SA1020-OF(J-ND

Manufacturer Part#:

2SA1020-O,F(J

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 2A 50V TO226-3
More Detail: Bipolar (BJT) Transistor PNP 50V 2A 100MHz 900mW T...
DataSheet: 2SA1020-O,F(J datasheet2SA1020-O,F(J Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD
Description

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The 2SA1020-O,F(J is a NPN bipolar junction transistor (BJT) commonly used in consumer electronic applications.

A bipolar junction transistor (BJT) is a solid state device made up of two P-type and one N-type semiconductor elements, a P-type base, an N-type emitter, and an N-type collector. The 2SA1020-O,F(J is a single-stage NPN transistor and the emitter and collector are connected to the base.

When a bias voltage is applied to the base-emitter junction, it changes the characteristics of the transistor. This allows the current flow through the transistor to be controlled, by adjusting the bias voltage. This is referred to as biasing the transistor. This allows the transistor to act as an amplifier or switch, depending on the characteristics of the bias voltage.

The 2SA1020-O,F(J has a wide range of application fields, such as linear amplifiers, power amplifier stages, switching circuits, preamplifiers, and various RF circuits. It is also commonly used in consumer electronic products, such as amplifiers, receivers, and audio equipment. The 2SA1020-O,F(J can also be used in automotive electronics, such as voltage regulators, fuel injection systems, and engine control systems.

The basic working principle of the 2SA1020-O,F(J is the same as other single-stage NPN transistors. The voltage applied to the base-emitter junction controls the current flow through the transistor. When a higher voltage is applied to the base-emitter junction, the transistor becomes more conductive and allows a larger current to flow from the Collector to the Emitter. Conversely, when a lower voltage is applied, the transistor becomes less conductive and allows less current to flow from the Collector to the Emitter.

The 2SA1020-O,F(J has a low collector-emitter saturation voltage and a high collector-emitter breakdown voltage, which are important for achieving high-speed switching and high sound quality in audio circuit applications. It also has low noise and good linearity characteristics, which enable it to be used in high-end linear amplifiers. This makes the 2SA1020-O,F(J an ideal choice for applications requiring high performance.

In summary, the 2SA1020-O, F(J is a single-stage NPN bipolar junction transistor (BJT) that is commonly used in a wide range of applications, such as linear amplifiers, switching circuits, preamplifiers, and audio equipment. It has a low collector-emitter saturation voltage and a high breakdown voltage, low noise and good linearity characteristics, making it suitable for applications requiring high performance.

The specific data is subject to PDF, and the above content is for reference

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