2SA1020-O(TE6,F,M) Allicdata Electronics
Allicdata Part #:

2SA1020-O(TE6FM)-ND

Manufacturer Part#:

2SA1020-O(TE6,F,M)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 2A 50V TO226-3
More Detail: Bipolar (BJT) Transistor PNP 50V 2A 100MHz 900mW T...
DataSheet: 2SA1020-O(TE6,F,M) datasheet2SA1020-O(TE6,F,M) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD
Description

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2SA1020-O(TE6,F,M) Application Field and Working Principle

When it comes to amplifying devices in circuits and linear systems, the 2SA1020-O(TE6,F,M) is a great choice due to its wide range of features and properties. It is a single, bipolar transistor that offers excellent linear performance, low voltage operation, rugged construction, and low heat dissipation. The transistor has been widely used in a variety of applications, and is available in both through-hole and surface mount packages.

The 2SA1020-O(TE6,F,M) features a NPN base region, and produces 120 mA of current when in use. It also has a maximum collector-emitter voltage of 40 volts, and a maximum collector current of 150 mA, allowing it to be used in applications over a wide range of power levels. The power dissipation of this transistor is very low, a major advantage for designers who need the highest performance devices.

The 2SA1020-O(TE6,F,M) also offers excellent linearity, allowing designers to accurately reproduce complex audio signals without distortion. Despite its low power dissipation and low voltage operation, this transistor can easily handle large signals without suffering from distortion or affecting the entire circuit.

The package version of the transistor also includes a built-in emitter-follower stage, which can be used to reduce the impedance of the output stage and make the design more efficient. This feature makes the transistor an ideal choice for designers who need to reduce power consumption while achieving high levels of performance.

In terms of application field, the 2SA1020-O(TE6,F,M) can be used in a variety of amplifier circuits, such as audio amplifiers, servo amplifiers, logic circuits, and many others. The transistors are also widely used in linear systems, such as switching power supplies, motor control, and telecommunication applications.

To understand the working principle of the 2SA1020-O(TE6,F,M), let’s take a look at the basic schematic diagram. In this diagram, the transistor is used as an amplifier. Here, the emitter-base junction is the input stage of the amplifier, while the collector-base junction is the output stage. When a current is applied to the base of the transistor, it in turn produces a corresponding current at the collector, thus amplifying the signal.

In summary, the 2SA1020-O(TE6,F,M) single transistor is an excellent choice for any application that requires a high level of linear performance with low power dissipation. It can be used in a wide variety of amplifier circuits, as well as linear systems, and its built-in emitter-follower stage makes it even more efficient. Despite its low power requirements, this transistor can easily handle large signals without distortion or affecting the entire circuit.

The specific data is subject to PDF, and the above content is for reference

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