| Allicdata Part #: | 2SA1020-Y(T6CANOAF-ND |
| Manufacturer Part#: |
2SA1020-Y(T6CANOAF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PNP 2A 50V TO226-3 |
| More Detail: | Bipolar (BJT) Transistor PNP 50V 2A 100MHz 900mW T... |
| DataSheet: |  2SA1020-Y(T6CANOAF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 2A |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 1A |
| Current - Collector Cutoff (Max): | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 500mA, 2V |
| Power - Max: | 900mW |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 Long Body |
| Supplier Device Package: | TO-92MOD |
Description
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The 2SA1020-Y(T6CANOAF) is a single transistor bipolar junction transistor (BJT) that offers its users outstanding performance and reliability in a wide range of applications. The design of the device is optimized to offer increased power capabilities and features a low-noise transistor structure. The MOSFET active region structure is also designed to minimize thermal distortion and reduce the amount of noise generated by the device during operation. The 2SA1020-Y(T6CANOAF) is designed to operate over a wide range of temperatures and can handle up to 20 A of continuous current. The integrated gate-source protection is also designed to minimize the risk of gate-source voltage exceeding a safe level should the transistor be subjected to any external changes.The 2SA1020-Y(T6CANOAF) can be used in a range of applications including amplifiers, low-noise amplifiers, high-speed switching and controlling, power supplies, and more. Its characteristics makes it an ideal device for a range of applications and in an array of situations.As for its working principle, the 2SA1020-Y(T6CANOAF) is a single transistor bipolar junction transistor (BJT). That is, it has three layers or regions, a base, the collector, and the emitter. The core piece is a semiconductor that consists of two distinct regions. One of them is doped with an impurity of a metal, and this is known as the n-type region, while the other side of the semiconductor is doped with an impurity of a metal, and this is called the p-type region. The collector region is connected to the base of the transistor and is where the holes accumulate. This region has a higher concentration of holes and electrons, creating an area of current concentration. The emitter region is connected to the collector and the base regions and is where the current flows. The base region is the path through which the current flows. It is a reverse-biased region, meaning that it will draw electrons or holes away from the emitter and collector regions, thus allowing current to flow. The 2SA1020-Y(T6CANOAF) is therefore designed to control the current flow through the base region by controlling the voltage applied to it. This is achieved by using a voltage divider circuit that is connected between the base terminal and ground, and this allows the current to be controlled. The current through the base of the transistor is known as the base current, and it is proportional to the voltage applied. When a small base current is applied, the base-emitter current is amplified, thus increasing the total current flowing through the collector-emitter of the transistor. The extent of the current amplification is determined by the h-parameter, which is typically in the range of 10-50, depending on the type of transistor. For maximum performance and reliability, the 2SA1020-Y(T6CANOAF) should be handled with caution and must only be used in applications that require its full performance capabilities. Failing to abide by these guidelines or underestimating the device\'s capabilities and characteristics can lead to damage of the device or other components in the circuit.
The specific data is subject to PDF, and the above content is for reference
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