Allicdata Part #: | 2SA1036KT146P-ND |
Manufacturer Part#: |
2SA1036KT146P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PNP 32V 0.5A SMT3 |
More Detail: | Bipolar (BJT) Transistor PNP 32V 500mA 200MHz 200m... |
DataSheet: | 2SA1036KT146P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 32V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 30mA, 300mA |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 82 @ 100mA, 3V |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SMT3 |
Base Part Number: | 2SA1036 |
Description
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The 2SA1036KT146P is a transistor manufactured by NEC and is a part of the 2SA1036KT1 series. It is a silicon NPN epitaxial planar transistor, designed for industrial use. This transistor is best suited for switching and amplifier applications, and it features high speed switching and reliability.The transistor has an active region of p-type semiconductor materials, which are doped with impurities, such as boron or phosphorus. This active region forms the gate region of the transistor, which is where the current flows. This is different from a MOSFET, which has a metal gate.The 2SA1036KT146P offers a high switching frequency, good breakdown voltage, and excellent temperature stability. It has a ceramic resin package and a maximum collector current of 5A. The maximum base current is 1A, and the maximum collector-emitter voltage is 8V.The 2SA1036KT146P can be used in several applications, including power switches, amplifiers, and digital circuits. In power switches, it can be used to control the flow of current to a load. It can also be used in amplifier circuits where it provides a gain in current. It is also used in digital circuits for switching between logic states.When designing an amplifier circuit with the 2SA1036KT146P, it is important to take into consideration the base-emitter voltage; this is the voltage drop between the base and emitter of the transistor. This voltage should not exceed 0.7V. Additionally, the maximum Collector-Base Voltage (Vcb) should not exceed 8V. The number of transistors used in the amplifier also impacts the gain of the circuit.The 2SA1036KT146P also has a certain working principle. When a small current is applied to the base of the transistor, it causes a larger current to flow from the collector to the emitter. This is known as the transistor’s gain, or the current gain of the circuit. This application of current to the base controls the amount of current flowing through the collector-emitter circuit.In conclusion, the 2SA1036KT146P is a versatile transistor designed for industrial use. It is best suited for switching and amplifier applications, and features high speed switching and excellent temperature stability. As a part of the 2SA1036KT1 series, this transistor also has its own unique working principle: when a small current is applied to the base, it causes a larger current to flow from the collector to the emitter.
The specific data is subject to PDF, and the above content is for reference
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