2SA1382,T6MIBF(J

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 33mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	150 @ 500mA, 2V
Power - Max:	900mW
Frequency - Transition:	110MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body
Supplier Device Package:	TO-92MOD

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2SA1382,T6MIBF(J application field and working principleThe 2SA1382,T6MIBF(J is an NPN Amplifier Transistor for audio frequency and general purpose amplifier applications. It can withstand higher collector power dissipation and offers superior current gain. This transistor is designed for operation at very high frequencies and it has good stability performance.The 2SA1382,T6MIBF(J is a low Vce(sat) NPN transistor and it is suitable for many electronic applications such as audio amplifier, switching, voltage sensing,current sensing and so on. It is also used as Darlington pair when combined with other suitable transistors. 2SA1382,T6MIBF(J features higher DC current gain, higher breakdown voltage, higher operating temperature and superior stability.Working Principle:The 2SA1382,T6MIBF(J is classified as a Bipolar Junction Transistor or BJT,which is a current-controlled semiconductor device that consists of two p-n junctions connected back-to-back. The three terminals of a BJT are the base,collector, and emitter. A BJT acts as a current amplifier by using the current flow through one p-n junction (base-emitter) to control the current in the other p-n junction (emitter-collector). If a current is applied to the base terminal, it will create a voltage across the base-emitter junction. This voltage will cause a large current to flow between the collector and emitter terminals, thus creating a current amplification effect. The base current cannot create more collector current than the emitter current and is limited by the Beta or current gain of the transistor. Beta values can range from 50 to 500 and the 2SA1382,T6MIBF(J has typical base current gain of 250 which is enough to amplify most signals. One of the other important parameters of a BJT is the Cutoff Frequency or Ft. This parameter is also known as the Transition Frequency or Switching Frequency and it is defined as the frequency at which the collector current is reduced by a factor of one half. The 2SA1382,T6MIBF(J features an Ft value of 1GHz and this makes it suitable for high frequency amplifier applications. Another important parameter of BJTs is the Collector-Emitter Voltage or Vce. This is the voltage that must be applied between the collector and emitter terminals to ensure the current amplification effect. The 2SA1382,T6MIBF(J features a Vce of -0.2V to -2V and this ensures maximum current flow and power amplification.Applications:The 2SA1382,T6MIBF(J is suitable for applications such as audio amplifiers, switching applications, voltage sensing, current sensing and other common base-emitter applications. It can be used in high frequency AC/DC converters and other power applications. It can also be used in various computer applications such as display controllers and embedded systems. The 2SA1382,T6MIBF(J can be used in Darlington pairs when combined with other suitable transistors. It is also suitable for signal amplification and noise reduction applications due to its high current gain and low noise characteristics.Conclusion:The 2SA1382,T6MIBF(J is an NPN amplifier transistor suitable for many audio frequency and general purpose applications. Its excellent current gain and high frequency response make it well suited for audio, signal amplification and power applications. It also features exceptionally low collector-emitter saturation voltage and excellent switching characteristics.

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