2SA1416S-TD-E Allicdata Electronics
Allicdata Part #:

2SA1416S-TD-EOSTR-ND

Manufacturer Part#:

2SA1416S-TD-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 100V 1A SOT89-3
More Detail: Bipolar (BJT) Transistor PNP 100V 1A 120MHz 500mW ...
DataSheet: 2SA1416S-TD-E datasheet2SA1416S-TD-E Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 500mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP
Description

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2SA1416S-TD-E application field and working principle

The 2SA1416S-TD-E is a NPN silicon epitaxial transistor designed for use in high-frequency power amplifiers and switching applications. It features excellent high-speed switching time, high gain, high input impedance and high operating temperature, making it an ideal choice for power amplification in various applications.

Application Fields

The 2SA1416S-TD-E can be used in a wide range of applications, such as:

  • Power amplification (Class A and B)
  • Switching applications
  • High-frequency switching power supply
  • Motor control
  • Battery management circuits
  • Ground fault detection
  • Instrumentation and automation controllers
  • Electromechanical relays

Working Principle

The 2SA1416S-TD-E transistor is a three-terminal device consisting of source, gate, and drain terminals. When a voltage is applied to the gate, the transistor allows current to flow between the source and drain, effectively amplifying the current. This transistor can be operated in either a linear or switching mode, allowing it to be used in a variety of applications.

In linear operation, the 2SA1416S-TD-E transistor acts as a current amplifier, with the current gain being determined by the ratio of the gate voltage to the source voltage. The higher the ratio, the higher the current gain. In switching mode, the transistor acts as a switch, with the gate voltage controlling the opening and closing of the switch. The switching speed of the transistor is determined by the gate voltage rise time, making this transistor ideal for applications where high speed switching is required.

Conclusion

In conclusion, the 2SA1416S-TD-E is an ideal device for power amplifiers and switching applications. With its high-speed switching time, high input impedance, and high operating temperature, the 2SA1416S-TD-E is the perfect choice for a variety of applications. When properly used, the 2SA1416S-TD-E can be a great asset to any system.

The specific data is subject to PDF, and the above content is for reference

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