2SA1417T-TD-E

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Transistors - Bipolar (BJT) - Single

2SA1417T-TD-E is a medium-power switching NPN transistor in a TO-220 package developed by Rohm Semiconductor. It is designed for use in audio, video, switching and switching regulator circuits.

Application Field

2SA1417T-TD-E transistor is mainly used in power switch circuits such as audio, video and switching regulation. It can be used in high-current switching circuits, audio amplifiers, power amplifier circuits and power drivers. In addition, it can be used in control circuits, automatic motor drivers and control circuits. It is especially suitable for use in switching regulators.

Working Principle

The 2SA1417T-TD-E transistor is a medium power switching NPN device with a built-in current limiter. It consists of three layers of semiconductor material arranged in the order of p-type, n-type and p-type. The effective base layer between the emitter and collector layers consists of an N-type impurity layer, which is surrounded by P-type material. This material forms the current path through which electrons flow from the collector to the emitter, forming an electric current.

When a voltage is applied across the base and emitter, it forms a junction or depletion region with a barrier potential. This depletion region prevents current flow until the emitter-base voltage reaches a certain level. As the voltage increases across the emitter-base junction, more electrons are injected into the base region, increasing the current flow.

At this stage, the device behaves like an open switch, allowing the current to flow from the collector to the emitter. As the voltage across the junction is increased further, the transistor saturates and the current is limited because of the built-in current limiter.

The 2SA1417T-TD-E is a medium power switching NPN transistor with a built-in current limiter designed for use in audio, video, switching and switching regulator circuits.

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