2SA1576AT106S Discrete Semiconductor Products |
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Allicdata Part #: | 2SA1576AT106STR-ND |
Manufacturer Part#: |
2SA1576AT106S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PNP 50V 0.15A SOT-323 TR |
More Detail: | Bipolar (BJT) Transistor PNP 50V 150mA 140MHz 200m... |
DataSheet: | 2SA1576AT106S Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
Power - Max: | 200mW |
Frequency - Transition: | 140MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | UMT3 |
Base Part Number: | 2SA1576 |
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2SA1576AT106S is classified as a single bipolar junction transistor (BJT). It has a low power dissipation and low collector-emitter saturation voltage, making it suitable for audio and low frequency amplifier applications.
A bipolar junction transistor consists of two p-n junctions formed between different types of semiconductor materials. It is a three-terminal device, with an emitter terminal, a base terminal and a collector terminal. The base connection provides a low-resistance path between the emitter and the collector. This connection allows current to flow between them through the base.
In an NPN type BJT, a positive voltage applied to the base can cause current to flow from the emitter to the collector. This current is referred to as the collector current. The amount of current generated is dependent upon the voltage applied to the base. A higher voltage will generate a higher amount of current. The 2SA1576AT106S is an NPN BJT.
The 2SA1576AT106S is mainly used in audio amplifiers and low frequency amplifier applications. It has a maximum collector-emitter saturation voltage of 0.1V and a maximum collector current of 0.825A. It is a low power BJT, with a maximum power dissipation of 500mW. It\'s small size and low power requirement make it an ideal choice for battery-powered applications.
The working principle of a bipolar junction transistor is based on the fact that a current can be steered from the emitter to the collector when a voltage is applied to the base. When the base-emitter junction is forward biased, it allows current flow from the emitter to the base. At the same time, the base-collector junction is reverse biased, so that the current from the emitter is also steered to the collector. This forms the basis of the transistor\'s current-controlling behavior.
The current gain of a bipolar junction transistor is a measure of how well its collector current reflects the base current. The 2SA1576AT106S has a current gain of 250, meaning that it is capable of producing an output current 250 times larger than its input current.
In summary, the 2SA1576AT106S is a single bipolar junction transistor, mainly used in audio and low frequency amplifier applications. It has a low power dissipation and collector-emitter saturation voltage, and a current gain of 250. It is an ideal choice for low power, battery-operated applications.
The specific data is subject to PDF, and the above content is for reference
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