![2SA17390RL Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | 2SA17390RLTR-ND |
Manufacturer Part#: |
2SA17390RL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PNP 15V 0.05A SMINI-3 |
More Detail: | Bipolar (BJT) Transistor PNP 15V 50mA 1.5GHz 150mW... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 90 @ 10mA, 1V |
Power - Max: | 150mW |
Frequency - Transition: | 1.5GHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SMini3-G1 |
Base Part Number: | 2SA1739 |
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The 2SA17390RL is a single bipolar junction transistor (BJT) commonly used in consumer electronic devices. It is made from a compound semiconductor material of indium phosphide (InP) and germanium (Ge). The 2SA17390RL is a small signal amplifier, and is also known as a PNP transistor.
The 2SA17390RL has a variety of applications. It is often used in power supplies, DC-to-DC converters, voltage regulators, audio amplifiers, audio oscillators, and automotive systems. It can also be used in radio frequency and microwave amplifiers, high-voltage control circuits, and amplifiers. This transistor has an impressive switching speed of 15ns, making it ideal for many high-frequency applications.
The 2SA17390RL utilizes a PNP junction design. A PNP transistor is composed of three layers of semiconductive material, stacked in a particular order, which are referred to as the emitter, the base, and the collector. The outermost semiconductor is the collector, and is given a positive voltage when the transistor is turned on, allowing electrons to flow through the middle layer, the base. The base is the weakest link and functions as a gate, controlling the flow of electrons. The innermost semiconductor is the emitter and directs the electrons towards the negative/ground terminal.
The 2SA17390RL is composed of two junctions: an NPN junction is a P-type semiconductor (e.g. indium phosphide) and an N-type semiconductor (e.g. germanium). When the base is activated and current flows between the emitter and the base, the 2SA17390RL enters a conductive state, allowing the current to travel through the collector. This is known as the forward active state. If the base stops receiving current, the 2SA17390RL enters a blocked state. This is known as the reverse active state, and helps protect the transistor from damage.
The 2SA17390RL is capable of handling a maximum current of 5.0mA and has an operating voltage range of -8V to -32V. It has a forward current gain of 10 and a total power dissipation of 125mW. Its capacitance is also impressive, with a collector-base capacitance of 0.3pF, a collector-emitter capacitance of 0.2pF, and an emitter-base capacitance of 0.1pF. The maximum collector-emitter and collector-base voltages are 80V and 100V respectively.
The 2SA17390RL is a small and powerful transistor with a variety of applications. Its impressive switching speed and impressive capacitance capabilities make it well-suited for power supplies, DC-to-DC converters, voltage regulators, and audio amplifiers. It can also be used in other circuitry, including radio frequency and microwave amplifiers and high-voltage control circuits.
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