2SA17480RL

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Bipolar Junction Transistors are ubiquitous in electronics, used for a variety of tasks such as amplification, signal switching, and voltage control. The 2SA17480RL is a single discrete bipolar junction transistor, used for amplification and power switching applications. Depending on the current path, this bipolar junction transistor can be used as either a PNP or an NPN transistor.

The 2SA17480RL is a PNP transistor, meaning its emitter is connected to the positive side of the circuit while its collector is connected to the negative side. A voltage applied to the base terminal (B) causes current to flow from the emitter (E) to the collector (C), creating a power gain of about 120. This gain is created through electron current moving between the base and collector, which is also known as a bipolar transistor’s current gain.

The 2SA17480RL features a maximum collector current of 1.0A and a maximum collector-base breakdown voltage of -45V. It also has a maximum collector-emitter voltage of -30V, a maximum emitter-base voltage of -5V, and a maximum power dissipation of 2.5W. This transistor can operate at temperatures ranging from -55°C to +150°C.

The 2SA17480RL is particularly well suited for use in audio power amplifiers, low noise amplifiers, power switching applications, circuit protection circuits, and DC-DC converters. These transistors are also widely used in automotive, battery management and other power management applications.

Overall, the 2SA17480RL is an incredibly versatile and reliable transistor, which offers a wide range of applications and high performance in all conditions. Its wide range of features and specifications make it an ideal choice for a variety of electronics and power management projects. Suitable for use in various environments, from residential to industrial, this PNP bipolar transistor is a great choice for any project requiring a high-performance, reliable transistor.

The specific data is subject to PDF, and the above content is for reference