2SA1869-Y(Q,M) Allicdata Electronics
Allicdata Part #:

2SA1869-Y(QM)-ND

Manufacturer Part#:

2SA1869-Y(Q,M)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PNP 3A 50V TO220-3
More Detail: Bipolar (BJT) Transistor PNP 50V 3A 100MHz 10W Thr...
DataSheet: 2SA1869-Y(Q,M) datasheet2SA1869-Y(Q,M) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 10W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS
Description

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2SA1869-Y(Q,M) is a single bipolar transistor designed for various applications, such as audio amplifiers, power amplifiers, switching circuits, and voltage regulators.It belongs to the TO-3PN (PNP) package family. It can be used in both low frequency and high frequency applications and is capable of delivering high collector currents of up to 3 A.

Application Field of 2SA1869-Y(Q,M):2SA1869-Y (Q,M) is a NPN transistor mainly designed for various audio applications. It is extensively used in audio amplifiers, power amplifiers, switching circuits, and voltage regulators. These components are widely used in electronic amplifiers, audio systems, TV sound systems, electronic motors and other electronic devices. This transistor has high power dissipation and high gain, making it suitable for many applications.Working Principle of 2SA1869-Y(Q,M): The 2SA1869-Y (Q,M) works by utilizing the properties of negative temperature coefficient resistance to create a closed feedback loop between the emitter and collector. The negative temperature coefficient resistance allows the current to flow through the emitter-base junction even at comparatively low voltages. Generally, the base of the NPN transistor is connected to the negative terminal, the collector is connected to the positive terminal, and the emitter is connected to ground. When the base voltage is increased, the current is allowed to flow through the transistor and hence the voltage in the collector is increased. This increase in the collector voltage is proportional to the base current and is known as the transistor\'s amplification factor, hence the name bipolar transistor. 2SA1869-Y (Q,M) is a versatile transistor with strong performance. It is highly reliable, fast switching and is an excellent choice for a wide range of applications. Due to its high power dissipation, it can be used in high power devices and also in low power devices with good performance. This transistor is also very popular in switching circuits, as its low input impedance makes it ideal for switching large currents. In conclusion, 2SA1869-Y (Q,M) is a single bipolar transistor with a wide range of applications. It can be used in both audio applications and switching circuits. Its high power dissipation and excellent performance make it suitable for many applications. The negative temperature coefficient resistance allows it to work in both low and high frequencies, making it a very useful and versatile component.

The specific data is subject to PDF, and the above content is for reference

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