Allicdata Part #: | 2SA1931KEHINQ(M-ND |
Manufacturer Part#: |
2SA1931,KEHINQ(M |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PNP 5A 50V TO220-3 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 5A 60MHz 2W Throu... |
DataSheet: | 2SA1931,KEHINQ(M Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1A, 1V |
Power - Max: | 2W |
Frequency - Transition: | 60MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220NIS |
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The 2SA1931 and KEHINQ (M) are both transistors that belong to the bipolar junction transistor (BJT) single category. These transistors are used in a wide range of electronic applications. They both have a few similarities and some significant differences, which will be discussed in this article.
The 2SA1931 and KEHINQ (M) are NPN transistors. NPN transistors are used for current amplification. They are one type of bipolar transistors, which use two p-n junctions. The two junctions are separated by an amplification region called the base. NPN transistors are used in a wide range of applications, from amplifying weak signals to switching a load, depending on the size and type of the transistor.
The 2SA1931 and KEHINQ (M) both have similar electrical characteristics. They have a shared emitter-collector voltage of up to 30 volts. Their base current is up to 25mA, and their collector current is up to 500mA. They are also similarly rated for power dissipation, at up to 410mW.
One significant difference between the 2SA1931 and KEHINQ (M) is their capability to dissipate heat. The 2SA1931 has a maximum power dissipation of 410mW, while the KEHINQ (M) has a maximum power dissipation of 750mW. This difference is an important factor when choosing which transistor to use in an application.
These two types of transistors can be used in a variety of applications. The 2SA1931 is often used for audio amplification and switching in low-power circuits, while the KEHINQ (M) is used for applications that require higher power dissipation, such as power supplies and high-power switching systems.
The 2SA1931 and KEHINQ (M) both work on the same principle. When a voltage is applied to the base terminal, it creates an electric field inside the transistor. This electric field allows current to flow between the emitter and collector terminals, which creates amplification. The amount of amplification depends on the voltage applied to the base terminal, as well as the design of the transistor.
In conclusion, the 2SA1931 and KEHINQ (M) are both transistors that belong in the bipolar junction transistor (BJT) single category. They both have similar electrical characteristics, but the 2SA1931 has a lower power dissipation rating than the KEHINQ (M). They are used in a wide range of applications, from audio amplification to switching in low-power circuits. Both types work on the same principle, using an electric field to amplify a signal.
The specific data is subject to PDF, and the above content is for reference
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