Allicdata Part #: | 2SA1943OTU-ND |
Manufacturer Part#: |
2SA1943OTU |
Price: | $ 1.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 250V 17A TO264 |
More Detail: | Bipolar (BJT) Transistor PNP 250V 17A 30MHz 150W T... |
DataSheet: | 2SA1943OTU Datasheet/PDF |
Quantity: | 1105 |
1 +: | $ 1.77660 |
10 +: | $ 1.59327 |
100 +: | $ 1.30542 |
500 +: | $ 1.11127 |
1000 +: | $ 0.93722 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 17A |
Voltage - Collector Emitter Breakdown (Max): | 250V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 800mA, 8A |
Current - Collector Cutoff (Max): | 5µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 1A, 5V |
Power - Max: | 150W |
Frequency - Transition: | 30MHz |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264-3 |
Base Part Number: | 2SA1943 |
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The 2SA1943OTU is a type of bipolar junction transistor (BJT), specifically a single type. It is a small signal PNP transistor, and was designed for use in low-frequency (<1 MHz) amplifier and switching circuits in consumer-grade electronics. It is an epitaxial Si planar transistor and has a current gain, hFE, of between 70-150. It is designed for a voltage of between 6-32 volts and can handle a collector current of 1.2A and a total power dissipation of 1W. It is also very reliable, with an estimated life expectancy of 100,000 hours.
The 2SA1943OTU is typically used in consumer electronics, such as TVs and DVD players, where it is utilized in low-frequency amplifier and switching circuits. It is also used in other consumer-grade electronics, ranging from vacuum cleaners to washing machines. It is especially suited for use as an amplifier in circuits where it amplifies and shapes audio signals to produce the desired sound. It can also be used in low-frequency switching circuits and voltage regulators.
The working principle of the 2SA1943OTU is based on the principles of semiconductor and solid-state physics. The transistor consists of three layers, an Emitter, a Base, and a Collector. At the Emitter layer, electrons are injected into the Base layer, which has been doped with a precisely controlled amount of impurities to give it a negative charge. The electrons then pass through the Base layer and into the Collector layer. The Collector layer has been doped with a precisely controlled amount of impurities to give it a positive charge. The flow of electrons from the Emitter to the Collector is controlled by the Base layer and is what gives the transistor its switching characteristics.
The flow of electrons through the transistor is controlled by an applied voltage. When the voltage applied to the Base layer is greater than the Emitter-Base voltage, electrons will flow from the Emitter to the Collector, allowing the Collector-Base junction to be switched on. Conversely, when the voltage applied to the Base layer is less than the Emitter-Base voltage, the electrons will not flow from the Emitter to the Collector, and the Collector-Base junction will be switched off.
Therefore, the 2SA1943OTU can be used to control the flow of current through a circuit, allowing it to be used as an amplifier or a switch as required. It is especially suited for low-frequency applications due to its high current gain and low saturation voltage, making it ideal for amplifying audio signals or switching low-power electronic components. This makes the 2SA1943OTU an invaluable transistor in the consumer electronics industry, and its long life expectancy makes it an attractive choice for manufacturers looking to save on maintenance costs.
The specific data is subject to PDF, and the above content is for reference
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