2SC4132T100R Allicdata Electronics
Allicdata Part #:

2SC4132T100RTR-ND

Manufacturer Part#:

2SC4132T100R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN 120V 2A SOT-89
More Detail: Bipolar (BJT) Transistor NPN 120V 2A 80MHz 2W Surf...
DataSheet: 2SC4132T100R datasheet2SC4132T100R Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3
Base Part Number: 2SC4132
Description

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2SC4132T100R, also known as NPN Silicon High-Frequency Transistor, is a type of Bipolar (BJT) and Single Transistor. This transistor is especially useful for applications which require high-frequency operation due to its small signal performance and high breakdown voltage.Given its outstanding features, 2SC4132T100R has a wide range of practical applications, including usage in signal amplification equipment, low-loss switching circuits, and low power mixer stages. It is also used in FM transmitters, class A & B amplifiers, and television signal processing.The working principle of the 2SC4132T100R transistors can be understood in a simple manner. When a small signal is applied to the base input which is connected to the emitter, the resulting small current is amplified by the collector current which flows through the collector-emitter junction. As the collector current increases, it causes a proportional increase in voltage across the collector-emitter junction that is the output voltage. This process is known as base-emitter biasing, which is the fundamental principle behind the operation of a BJT transistor.In order to ensure the correct functioning of a 2SC4132T100R, it is important to note that the current but into the transistor should not exceed the maximum collector current rating. In addition, the input current should lie within the allowable range changes. Moreover, the voltage at the base should be maintained within the specified rating.In addition to the base-emitter biasing that form the basis of its functionality, the 2SC4132T100R also utilizes two other mechanisms, namely: collector-emitter saturation and collector-emitter cut-off. The first mechanism involves the application of bias voltage to the collector-emitter junction when the base current becomes larger than a certain value. This results in the current to decrease slightly before it suddenly shoots up and saturates at a particular level. The second mechanism takes place in a reverse fashion each time the base current is reduced below a certain threshold, causing the current to cut-off.Finally, it is also important to consider the temperature rating when using the 2SC4132T100R transistors. This is because the operating temperature can significantly affect the collector-emitter voltage and the collector-emitter saturation voltage. Specifically, the temperature of the transistor can significantly reduce by lowering the collector-emitter voltage and increase by raising the saturation voltage.Overall, 2SC4132T100R transistors are ideal for a wide range of applications due to their small signal performance, large breakdown voltage, and the fact that they are able to operate at higher frequencies than other transistors. The working principle of these transistors can also be understood in a simple manner which involves base-emitter biasing, collector-emitter saturation, and collector-emitter cut-off. It is also important to keep in mind the temperature rating as this can have a major impact on the transistors’ performance. With all this in mind, the 2SC4132T100R transistors are well-suited for use in a number of industrial and commercial applications.

The specific data is subject to PDF, and the above content is for reference

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