2SC5227A-4-TB-E Discrete Semiconductor Products |
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Allicdata Part #: | 2SC5227A-4-TB-EOSTR-ND |
Manufacturer Part#: |
2SC5227A-4-TB-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN BIPO VHF-UHF CP |
More Detail: | RF Transistor NPN 10V 70mA 7GHz 200mW Surface Moun... |
DataSheet: | 2SC5227A-4-TB-E Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 10V |
Frequency - Transition: | 7GHz |
Noise Figure (dB Typ @ f): | 1dB @ 1GHz |
Gain: | 12dB |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 90 @ 20mA, 5V |
Current - Collector (Ic) (Max): | 70mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | 3-CP |
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2SC5227A-4-TB-E is one of the many different types of transistors. It belongs to a class of transistors called Bipolar (BJT) RF transistors, which are specifically designed for use in radio frequency applications. These transistors are primarily used in different kinds of communication and audio equipment, such as radio transmitters, receivers, amplifiers and sound cards.
The 2SC5227A-4-TB-E is a NPN wideband transistor designed to be used in medium-to-high power applications. It features a low noise design and is capable of operating in wide temperature ranges. It is also capable of handling high voltages, making it suitable for use in power supply circuits, amplifiers and oscillators.
The transistor consists of three layers of semiconductor material, all of which are separated from each other. The first layer is the emitter, which is where the electrons will be emitted. The second layer is the base, which controls the flow of electrons between the other two layers. Finally, the third layer is the collector, which collects the electrons emitted by the emitter.
The working principle of a 2SC5227A-4-TB-E is the same as that of any other transistor. When a small electrical current is applied to the base, the electrons flowing from the emitter will be attracted to the base. As the electrons collect near the base, they will create a depletion region, which will prevent further electrons from passing through. This will result in an accumulation of charge near the base and will create an electric field which will act as a barrier to the electrons.
Once the electric field has been created, the current through the transistor will increase, allowing an amplified signal to be sent from the base to the collector. The emitted signal can then be used for different purposes, such as radio transmissions, amplifying signals and oscillators.
The 2SC5227A-4-TB-E has several advantages over other types of transistors. The low noise design allows the transistor to operate even in noisy environments. It is also capable of handling high voltages, making it suitable for power supply circuits. The wide temperature range of operation means it can be used in a variety of conditions, ranging from cold to hot environments. Finally, it is also cost effective, making it a popular choice for many different applications.
In conclusion, the 2SC5227A-4-TB-E is a versatile, cost effective, and reliable transistor designed specifically for use in RF applications. Its low noise design and wide temperature range make it an ideal choice for many different applications. It can handle high voltages and is suitable for use in amplifiers and oscillators. Its versatility and cost effectiveness make it a popular choice for many different communication and audio applications.
The specific data is subject to PDF, and the above content is for reference
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