Allicdata Part #: | 2SC5566-TD-EOSTR-ND |
Manufacturer Part#: |
2SC5566-TD-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 4A SOT89-3 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 4A 400MHz 1.3W Su... |
DataSheet: | 2SC5566-TD-E Datasheet/PDF |
Quantity: | 4000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 225mV @ 100mA, 2A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 500mA, 2V |
Power - Max: | 1.3W |
Frequency - Transition: | 400MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | PCP |
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The 2SC5566-TD-E is a transistor of the Field Effect Transistor (FET) family, specifically of the Bipolar (BJT) type. It is a single transistor, meaning that it comprises only one active, semiconductor layer.
The 2SC5566-TD-E is primarily used for switching, amplification and other application fields in industrial electronics such as precision measurement, power supplies, and communications equipment. It is designed for use in low-noise analog circuit applications, as it can offer excellent noise characteristics and does not usually require a built-in noise source. Additionally, the transistor can be used for radio-frequency circuits, as it operates with a higher bandwidth than most other BJT transistors.
The working principle behind the 2SC5566-TD-E is its FET-style operation. It operates by allowing a small electric current to flow between its two main electrodes, the base and collector. This electric current is controlled by applying a voltage between them. The main difference between BJT and FET is that in BJT, the current flow is determined by the presence of minority carriers, whereas in FET, the current flow is determined by the presence of carriers of the same type.
The 2SC5566-TD-E can offer increased control and better accuracy compared to other BJT transistors due to its FET-style operation. Furthermore, the transistor is well-suited to low-voltage applications, as it can be operated at very low voltages. This makes it ideal for applications where a minimum change in current is required, as it can achieve this with any low voltage. Finally, the transistor offers a low power consumption, making it suitable for use in applications where power efficiency is a priority.
In summary, the 2SC5566-TD-E is a single-transistor BJT from the Field Effect Transistor family. It is designed for use in low-noise analog circuit applications and can be used for switching, amplification and precision measurement. It offers excellent noise characteristics, a higher bandwidth than many other transistors, increased control accuracy and low power consumption. This makes it suitable for various applications in industrial electronics.
The specific data is subject to PDF, and the above content is for reference
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