2SC5824T100R

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Bipolar Junction Transistors, or BJTs, are semiconductor devices consisting of three terminals, a Collector, a Base, and an Emitter. In the 2SC5824T100R, the Collector is the input, the Base is the control, and the Emitter is the output. This device is a single type of BJT, meaning it has a single substrate or layer, and is categorized as NPN type.

NPN transistors are used in many applications, and the 2SC5824T100R\'s most common application is in low voltage, low current circuits. It can be used for amplifier operations in audio, radio, and television equipment, for gain control in digital logic circuits, and for switching operations in high frequency circuits.

The BJT\'s working principle involves the movement of negative charge carriers, or electrons. From the Collector, electrons travel to the Base and are then responsible for controlling the movement of additional electrons from the Emitter. The ratio of electrons moving from the Emitter to the Collector is referred to as the BJT\'s Gain, and is usually specified in the transistor\'s datasheet.

In order for the BJT to function, current must be supplied to the Base, which influences the amount of current that travels across the Emitter-Collector junction. This current is regulated by the Base-Emitter current. When the Base-Emitter voltage reaches a certain value, the transistor is said to be \'active\', meaning current is allowed to flow through the circuit.

Developing a circuit around the 2SC5824T100R requires careful consideration of the transistor\'s parameters. Its maximum power dissipation rating is 650mW, while the Collector-Base is able to sustain voltages up to 75V. The Collector-Emitter saturation voltage is typically 1.3V, with a maximum collector DC current of 100mA.

In regards to its Collector-Emitter leakage current, the 2SC5824T100R offers extremely low leakage when the voltage between the Collector and Emitter is 1V. This is highly beneficial for conserving energy, ensuring the transistor does not continuously draw too much current even when in \'off\' states.

Externally, the 2SC5824T100R is mounted on a TO-92 housing, with an overall size of 3.94 x 3.94 x 4.5mm. It has a weight of 0.3 grams, a Lead-Free (RoHS Compliant) finish, and is ideal for operating temperatures between -40 and +150°C. It is also available in Tape and Reel package form, for automated surface-mount assembly.

Overall, the 2SC5824T100R is conceived as a universal general-purpose low voltage amplifier, ideal for small-scale audio, radio, television, and digital logic circuits. It is a fairly standard NPN BJT transistor with limited specifications, but is nonetheless a reliable choice for low power applications.

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