| Allicdata Part #: | 2SC5658RM3T5GOSTR-ND |
| Manufacturer Part#: |
2SC5658RM3T5G |
| Price: | $ 0.03 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 50V 0.1A SOT-723 |
| More Detail: | Bipolar (BJT) Transistor NPN 50V 100mA 180MHz 260m... |
| DataSheet: |  2SC5658RM3T5G Datasheet/PDF |
| Quantity: | 8000 |
| 8000 +: | $ 0.02355 |
| 16000 +: | $ 0.02002 |
| 24000 +: | $ 0.01884 |
| 56000 +: | $ 0.01767 |
| 200000 +: | $ 0.01570 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 60mA |
| Current - Collector Cutoff (Max): | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 215 @ 1mA, 6V |
| Power - Max: | 260mW |
| Frequency - Transition: | 180MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-723 |
| Supplier Device Package: | SOT-723 |
| Base Part Number: | 2SC5658 |
Description
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2SC5658RM3T5G, also known as its industry classification name “SOT-563 Dual N-Channel Transistor” is a type of transistor known as a bipolar junction transistor or BJT for short. This type of transistor is single, as opposed to other transistors which may be dual, or even more. The 2SC5658RM3T5G is often used in electronic circuits such as amplifiers, audio signal processing, high-frequency power supplies, input stages, and motor controls.
A bipolar junction transistor is composed of two semiconductors, a base and emitter, and a base and collector. When current flows through the emitter and collector it affects the behavior of electrons in the base region, allowing a certain portion of the current to flow along the base-emitter junction. This allows the transistor to function as a switch, allowing either a high or a low current through its emitter. The current flow through the emitter is proportional to the current that flows through the base and collector, allowing the device to control the current flow through the load circuit.
The 2SC5658RM3T5G is designed to offer superior performance in applications such as audio signal processing, high-frequency power supplies, input stages and motor controls. As such, it has features such as excellent noise performance, high slew rate, wide temperature range and low quiescent currents. Additionally, with its small size and low profile, it is also suitable for use in applications where space is at a premium.
The major benefit of the 2SC5658RM3T5G transistor is its ability to control the current flow through its emitter. This is done by applying a voltage to its base and collector, which causes a current to flow through the base-emitter junction. This current is then used to control the current flowing through the emitter, allowing the device to switch on or off the current through its load circuit. This makes the 2SC5658RM3T5G an ideal choice for use in various electronic circuits, as it provides a reliable and accurate method for controlling current.
In conclusion, the 2SC5658RM3T5G is a single BJT transistor which is often used in many different applications. Its ability to control current flow through its emitter makes it an ideal choice for use in applications such as audio signal processing, high-frequency power supplies, input stages and motor controls. Additionally, its small size and low profile make it suitable for use in applications where space is at a premium.
A bipolar junction transistor is composed of two semiconductors, a base and emitter, and a base and collector. When current flows through the emitter and collector it affects the behavior of electrons in the base region, allowing a certain portion of the current to flow along the base-emitter junction. This allows the transistor to function as a switch, allowing either a high or a low current through its emitter. The current flow through the emitter is proportional to the current that flows through the base and collector, allowing the device to control the current flow through the load circuit.
The 2SC5658RM3T5G is designed to offer superior performance in applications such as audio signal processing, high-frequency power supplies, input stages and motor controls. As such, it has features such as excellent noise performance, high slew rate, wide temperature range and low quiescent currents. Additionally, with its small size and low profile, it is also suitable for use in applications where space is at a premium.
The major benefit of the 2SC5658RM3T5G transistor is its ability to control the current flow through its emitter. This is done by applying a voltage to its base and collector, which causes a current to flow through the base-emitter junction. This current is then used to control the current flowing through the emitter, allowing the device to switch on or off the current through its load circuit. This makes the 2SC5658RM3T5G an ideal choice for use in various electronic circuits, as it provides a reliable and accurate method for controlling current.
In conclusion, the 2SC5658RM3T5G is a single BJT transistor which is often used in many different applications. Its ability to control current flow through its emitter makes it an ideal choice for use in applications such as audio signal processing, high-frequency power supplies, input stages and motor controls. Additionally, its small size and low profile make it suitable for use in applications where space is at a premium.
The specific data is subject to PDF, and the above content is for reference
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