Allicdata Part #: | 2SC5338-T1-AZ-ND |
Manufacturer Part#: |
2SC5338-T1-AZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | RF TRANSISTOR NPN SOT-89 |
More Detail: | RF Transistor NPN 12V 150mA 6GHz 1.8W Surface Moun... |
DataSheet: | 2SC5338-T1-AZ Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 6GHz |
Noise Figure (dB Typ @ f): | 3.5dB @ 1GHz |
Gain: | 10dB |
Power - Max: | 1.8W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 50mA, 5V |
Current - Collector (Ic) (Max): | 150mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89 |
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Introduction
2SC5338-T1-AZ is a low-noise JFET transistor designed for radio-frequency (RF) applications. It is a type of N-channel Junction Field-Effect Transistor (JFET) that belongs to the Bipolar (BJT) - RF class of transistors. It offers very low noise figure, low gate current (IG) and DC current drain (ID). With its excellent RF/noise signal characteristics it is well suited for battery powered radio communication systems.
Application Field
2SC5338-T1-AZ is primarily used as an RF amplifier in wireless communication systems. It has excellent signal-to-noise ratio that makes it suitable for applications such as low-noise receiving amplifiers and high-performance FM receivers. It is also used in cellular telephones, digital cable TV systems, Direct Broadcast Satellite (DBS) systems, and wireless Local Area Networks (WLANs). Other applications include medical instrumentation, satellite data links and High Definition Television (HDTV) broadcast reception.
Working Principle
2SC5338-T1-AZ operates in the same manner as any other JFET. It utilizes a reverse biased gate voltage to control the channel current flow between the source and drain terminals. The gate voltage modulates the channel-width, which increases or decreases the current that can flow between the source and drain. This modulation of the channel-width allows the device to act as a current-controlled current source, similar to a bipolar transistor.
2SC5338-T1-AZ is well suited for low-noise amplifier applications due to the low-noise figure that it provides. It has a low IG (Ig), which is the current from the gate to the source. The device also has a low ID, which is the current from the drain to the source. This low IG and low ID allow the device to reduce noise input while providing a high signal-to-noise ratio, thus making it ideally suited for use in low-noise receiving amplifiers.
In addition to its low-noise operation, 2SC5338-T1-AZ also has a high voltage breakdown capability (VBR), which allows it to be used in high-voltage circuits. This feature also makes it highly suitable for use in satellite data links, medical instrumentation and HDTV broadcast reception.
Conclusion
2SC5338-T1-AZ is a low-noise JFET transistor that is designed for radio-frequency (RF) applications. It is an N-channel Junction Field-Effect Transistor (JFET) that belongs to the Bipolar (BJT) - RF class of transistors. Its excellent RF/noise characteristics, low noise figure, low gate current (IG) and DC current drain (ID) make it ideally suited for low-noise receiving amplifiers, cellular telephones, digital cable TV systems and other RF devices.
The specific data is subject to PDF, and the above content is for reference
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