2SD1863TV2R

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 20mA, 500mA
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	180 @ 500mA, 3V
Power - Max:	1W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	3-SIP
Supplier Device Package:	ATV
Base Part Number:	2SD1863

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Transistors - Bipolar (BJT) - Single2SD1863TV2R are NPN low-finderd transistors developed for high-speed switching applications at frequencies up to 1 MHz or so. They are often used in common emitter configuration, but can also be used in differential amplifier, current mirror, constant current sink and other applications. 2SD1863TV2R are made of a semiconductor material based on a combination of silicon and germanium, with each layer exhibiting electrical properties to optimize performance. These transistors have low power consumption and high voltage gain properties, and are also resistant to breakdown at high voltages, up to about 60 volts. The 2SD1863TV2R’s typical application fields include motor control, power circuit and audio amplifier. As a switching transistor, 2SD1863TV2R can be used to drive relays, solenoids and other small to medium inductive and capacitive loads, up to 2 amps with loads that require up to 57V and switching speeds of 1 MHz or less. Working PrincipleThe working principle of the 2SD1863TV2R transistor is based on an arrangement of three layers, or regions of semiconductor material stacked on top of each other. These layers create two junctions, where current can flow between the two regions. One region is known as the emitter and the other as the collector. The third region is in the middle and is known as the base. When a voltage is applied to the base, this voltage affects the flow of current from the emitter to the collector. This is because the the base-emitter region has the effect of allowing current to flow through it if the voltage between the base and emitter is higher than what is known as the forward bias voltage. This forward bias allows current to flow from the emitter to the collector. Once the current has been allowed to pass from the emitter to the collector, it creates a voltage difference between the transistor\'s base and collector. This voltage is referred to as the base-collector voltage and is used to control the amount of current flowing between the emitter and collector of the transistor. In addition to controlling the amount of current flowing between the emitter and collector, the base-collector voltage also allows the collector current to be increased or decreased. By raising or lowering the voltage applied to the base, the Collector current will be adjusted accordingly.The 2SD1863TV2R transistors are widely used in many different applications due to their utility, affordability, and electrical properties. The transistors high voltage gain and low power consumption makes them well-suited for applications such as motor control, power circuit and audio amplifier. Moreover, their ability to switch up to 57 volts and frequencies of 1MHZ or less make them even more useful for tasks such as controlling relays, solenoids, and other inductive and capacitive loads. Once the base-emitter voltage is applied, the transistor is able to pass current between its emitter and collector regions and the base-collector voltage is used to regulate the flow of current.

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