Allicdata Part #: | 2SD1938FSLTR-ND |
Manufacturer Part#: |
2SD1938FSL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 20V 0.3A MINI |
More Detail: | Bipolar (BJT) Transistor NPN 20V 300mA 80MHz 200mW... |
DataSheet: | 2SD1938FSL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 300mA |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 3mA, 30mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 500 @ 4mA, 2V |
Power - Max: | 200mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | Mini3-G1 |
Base Part Number: | 2SD1938 |
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2SD1938FSL is a type of single-bipolar junction transistor (BJT) which is primarily used for amplifying signals in audio-frequency radio applications. It belongs to the familiar TO-126 chip family, and its physical dimensions are 10.6 mm × 10.6 mm × 6.4 mm. This device has a wider frequency range and higher operating current than its peers, making it suitable for use in a variety of radio applications. It also has a built-in protection circuitry that makes it more reliable.
The main principle of operation of the 2SD1938FSL is that of voltaic current flow through a semiconductor material. This is accomplished by having a collector, base, and emitter connected together, thus causing an avalanche of electrons to flow in the circuit. The base-emitter voltage (Vbe) causes majority carriers to flow in the forward direction, while the collector-emitter voltage (Vce) determines the current gain of the transistor.
In the case of the 2SD1938FSL, the typical collector-emitter voltage is 12V, and the maximum collector-emitter voltage is 20V. The maximum current gain (hFE) is 85. The transistor has a maximum power dissipation of 1.0 watt and a maximum collector current of 500 mA. The Robinson-Schutz frequency (Ft) is 4 MHz, which is sufficient for most RF applications. The transistor can be used at temperatures ranging from -55°C to 150°C.
The 2SD1938FSL is mainly used for radio and television applications. It can be used in amplifiers, modulators, mixers, oscillators, detectors and other similar applications. It is also used in audio amplifiers, TV tuners, and video signal processing applications. Additionally, it also finds its application in RF power amplification, antenna tuning and switching.
In conclusion, the 2SD1938FSL is a single bipolar junction transistor that is suitable for high-frequency radio and audio applications. It has a wide frequency range and high current gain, making it suitable for multiple applications. Its built-in protection circuitry makes it highly reliable as well.
The specific data is subject to PDF, and the above content is for reference
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