| Allicdata Part #: | 2SD1857ATV2P-ND |
| Manufacturer Part#: |
2SD1857ATV2P |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | TRANS NPN 160V 1.5A ATV |
| More Detail: | Bipolar (BJT) Transistor NPN 160V 1.5A 80MHz 1W Th... |
| DataSheet: |  2SD1857ATV2P Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Box (TB) |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 1.5A |
| Voltage - Collector Emitter Breakdown (Max): | 160V |
| Vce Saturation (Max) @ Ib, Ic: | 2V @ 100mA, 1A |
| Current - Collector Cutoff (Max): | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 82 @ 100mA, 5V |
| Power - Max: | 1W |
| Frequency - Transition: | 80MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | 3-SIP |
| Supplier Device Package: | ATV |
| Base Part Number: | 2SD1857 |
Description
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Transistors - Bipolar (BJT) - Single
Introduction
The 2SD1857ATV2P is a PNP Transistor manufactured by Toshiba. The 2SD1857ATV2P is a planar Passivated Chip type which is also in small outline packages (SOP). This 2SD1857ATV2P is an analog transistor that complies with the JEDEC TO-220F-2L Standard. The 2SD1857ATV2P PNP transistor has very low noise, low collector-base capacitance, excellent transition frequency characteristics and minimum additional resistance from the collector to the base.
Features
- Collector current: A
- Collector-emitter breakdown voltage: 20 V
- Dissipation power: 20 W
- Operating temperature range: -55 °C to 150 °C
- Number of pins: 3
Applications
The 2SD1857ATV2P Transistor can be used in Audio systems, switching circuits, television applications, video systems, amplifiers, power management, and power transistor circuits.
Working Principle
The 2SD1857ATV2P is a PNP Silicon NPN planar epitaxial transistor. It works on the principle of three-layer semiconductor structure commonly used in the manufacture of transistors. The three layers are source, base, and collector. It is an NPN type bipolar junction transistor, meaning it is composed of two P-type semiconductor layers separated by a single N-type layer.
The 2SD1857ATV2P uses the principle of a transistor in which current flows between the collector and the emitter when a small voltage is applied to the base of the transistor. This current flow is due to the difference in charge between the collector and the emitter. The collector voltage, is applied across the emitter-collector junction of the transistor. This induces a current and this current flow creates a voltage across the collector and emitter terminals of the transistor. This is what is known as the transistor’s gain.
The 2SD1857ATV2P is a bipolar junction transistor, which means it can be used to amplify a small electrical current. The device works on the same principle as any other transistor; the current flows from the collector to the emitter when a voltage is applied to the base of the device. The device can be used either as an amplifier or an oscillator depending on how it is connected.
The 2SD1857ATV2P is capable of generating very low noise and features excellent transition frequency characteristics. It is also capable of withstanding a wide range of operating temperatures and experiences minimal additional resistance from the collector to the base.
Conclusion
In conclusion, the 2SD1857ATV2P is a PNP Bipolar Junction Transistor manufactured by Toshiba and is capable of being used in a wide range of applications including audio systems, switching circuits, television applications, video systems, amplifiers, power management, and power transistor circuits. The device works on the principle of three-layer semiconductor structure with an NPN type bipolar junction transistor. It operates on the principle of current flowing between the collector and the emitter when a small voltage is applied to the base of the transistor and is capable of generating very low noise and features excellent transition frequency characteristics.
The specific data is subject to PDF, and the above content is for reference
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