Allicdata Part #: | 2SD13280SLTR-ND |
Manufacturer Part#: |
2SD13280SL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 20V 0.5A MINI 3P |
More Detail: | Bipolar (BJT) Transistor NPN 20V 500mA 200MHz 200m... |
DataSheet: | 2SD13280SL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 20mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 500mA, 2V |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | Mini3-G1 |
Base Part Number: | 2SD1328 |
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A transistor is basically a semiconductor device that amplifies, switches, or modulates an electrical signal. It is used to control the flow of electric current in many electronic circuits and systems. The 2SD13280SL transistor is one of the most versatile transistors in the family of transistors. It is very commonly used in many electronics and electrical applications.
2SD13280SL belongs to the family of bipolar junction transistors (BJT). It consists of three terminals, namely the collector (C), the base (B) and the emitter (E). It is made from a P-type semiconductor material and has two N-type regions on its sides which are called the collector and the emitter regions. The base region is formed from a small strip of P-type material between the two N-type regions.
The 2SD13280SL is an NPN bipolar transistor which means that the collector and emitter currents are controlled by the base current. When the base emitter junction is forward biased, electrons flow freely from the emitter region to the collector region. This causes the current in the collector to be larger than the current in the emitter and hence the device amplifies.
The other feature of 2SD13280SL is its high breakdown voltage. The breakdown voltage is the voltage which must be applied in order to cause the device to conduct. The breakdown voltage of the 2SD13280SL is typically greater than 100V. This feature makes the 2SD13280SL useful for the conversion of high voltages to lower voltages and for applications that require high voltage amplifiers.
The 2SD13280SL transistor can be used in many applications such as signal amplifiers, audio amplifiers, power amplifiers, switching power supplies, battery chargers and many more because of its high breakdown voltage. It is also used in switching circuits for controlling the direction of the current flow, in power supplies for regulating and controlling the voltage, and in voltage converters for converting the voltage from high to low.
The 2SD13280SL is also used in linear amplifiers. Linear amplifiers use a combination of transistor circuits and feedback circuits in order to reduce distortion and provide a stable gain over the whole input signal range. This makes them ideal for use in audio amplifiers, radio frequency amplifiers, and voltage controlled amplifiers.
In conclusion, the 2SD13280SL can be used for many different applications and is a very common and versatile transistor. Due to its high breakdown voltage, it is especially useful for applications that involve high voltage signals or need amplification and regulation. It is used in many different types of circuits, from audio amplifiers to power supplies, and is a must-have in any engineer\'s toolkit.
The specific data is subject to PDF, and the above content is for reference
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