Allicdata Part #: | 2SD1991A0ATB-ND |
Manufacturer Part#: |
2SD1991A0A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 50V 0.1A MT-1 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 100mA 150MHz 400m... |
DataSheet: | 2SD1991A0A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 2mA, 10V |
Power - Max: | 400mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 3-SIP |
Supplier Device Package: | MT-1-A1 |
Base Part Number: | 2SD1991 |
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The 2SD1991A0A is a type of transistor device in the single bipolar junction transistor (BJT) category. It has a variety of uses, particularly in power control and amplification, and it works by passing electrical current control through the three PN junctions. This multi-functional device has the ability to act both as a current amplifier and as a switch, so it can be applied in both analog and digital applications.
The 2SD1991A0A is mainly used in large-scale integrated circuits and logic circuits, audio amplifiers and small scale applications. It works on the principle of controlling the speed of current flow with the help of PN junctions in order to amplify or switch the output. This device has the advantage of being able to withstand high voltage spikes, and it also has a high gain and low leakage current, making it suitable for various applications.
This device has two distinct terminals: the collector and the emitter. The collector is the main current obtaining terminal and the emitter is the terminal from which current is released. The principle of operation relies on the bipolar type of transistors wherein electrons form a base from one side, which then passes through the collector and the emitter. This electricity is then trapped due to the formation of depletion layer, which increases and decreases the current, thereby amplifying the output.
In order to increase the amount of current, an external voltage is applied at the base of the transistor, which then passes between the emitter and collector and increases the current flow. Conversely, when less voltage is applied, the current gets reduced. In order to control the flow of current effectively, the base-emitter voltage of the device usually ranges between 0.7 volts to 0.8 volts, with the collector-base voltage being between 6 volts and 12 volts.
The 2SD1991A0A can be used in a number of different applications including amplifiers, oscillators, switches, digital logic, power supplies, and voltage regulators. It is also used in circuits requiring high-current capabilities. This device is also popular among hobbyists and professionals, as it is relatively cheap and easy to find.
The 2SD1991A0A is an useful and versatile device, which makes it a great choice for those looking for a reliable BJT. It is low-cost, and its high voltage, low leakage current, and high gain make it an excellent choice for a variety of applications. Furthermore, its versatile nature allows it to be used in both analog and digital circuits, thus making it a great choice for almost any application.
The specific data is subject to PDF, and the above content is for reference
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