2SD1859TV2R

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2SD1859TV2R is a single bipolar junction transistor (BJT) which is applied for high-frequency and high-speed operation. It is comprised of a single NPN type construction, and it ideally designed for high-reliability amplifier circuits, low-noise amplifier circuits, and oscillator circuits.

The working principle of 2SD1859TV2R is similar to that of any transistor. A base-emitter junction, also known as the input, is biased by a voltage, which allows the electrons to move from the base to the emitter, creating an inversion layer between the two. As the current passes through the collector-base junction, a amplified version of the input current is produced at the collector. This amplified output is the transistor’s output.

The main application field of 2SD1859TV2R includes medical, robotics, automotive, and telecommunications industries. It is most commonly used in noise reduction and signal amplification circuits, such as low-noise amplifiers, high-frequency switching circuits, oscillator circuits, high-frequency power amplifiers, and motor driver circuits. It can also be used an amplifier, oscillator or electronic switch.

2SD1859TV2R has a high-speed and high integration rate, which makes it suitable for a wide range of amplifier and circuit applications. Moreover, its high frequency capability allows it to operate on frequencies up to 10 Ghz. This makes it ideal for high-frequency, high-speed circuits and applications.

2SD1859TV2R has a maximum collector-emitter voltage of 160V and its maximum collector power dissipation is 160W. Its collector-emitter saturation voltage can reach 0.5V at collector current of 1.5 A. Furthermore, it has a high linearity of 14.5 dB and a very small amount of noise.

2SD1859TV2R features excellent power characteristics with an optimal combination of voltage, ampere, collector-emitter saturation voltage, and breakdown voltage. It also provides high gain at high frequencies, making it suitable for high frequency, high speed circuits.

In summary, 2SD1859TV2R is a single bipolar junction transistor that is suitable for high-frequency and high-speed operations. It has great power characteristics, a high linearity, and low noise. It can be used in various amplifier, oscillator, and electronic switch applications in the medical, robotics, automotive, and telecommunications industries.

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