2SD1618T-TD-E Allicdata Electronics
Allicdata Part #:

2SD1618T-TD-E-ND

Manufacturer Part#:

2SD1618T-TD-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 15V 0.7A SOT89-3
More Detail: Bipolar (BJT) Transistor NPN 15V 700mA 250MHz 500m...
DataSheet: 2SD1618T-TD-E datasheet2SD1618T-TD-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Power - Max: 500mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP
Description

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The 2SD1618T-TD-E is a single, bipolar junction transistor (BJT) designed to meet the performance and reliability needs of a wide range of applications. This transistor is widely used in power, audio, video and logic circuits, as well as in automotive, medical and military systems. The 2SD1618T-TD-E is also suitable for use in switching power supplies, motor controllers, and low-noise amplifiers.

The 2SD1618T-TD-E is designed to operate at extremely wide supply and temperature ranges. It can maintain a low saturation voltage of 0.22 V (typically), low capacitive coupling, and low power consumption. It also has an ultra-high speed switching capability with a gain cutoff frequency (fT) of 150MHz and high breakdown voltage, making it capable of withstanding dynamic operating conditions.

The 2SD1618T-TD-E is operated using the bipolar ("BJT") technology. This means that the current flowing between the collector and the emitter of the BJT is controlled by the base current. This current consists of two "charge carriers": holes and electrons. When the voltage at the base of the transistor is above the threshold voltage, current flows from the collector to the emitter. As the voltage at the base increases, more charge carriers are drawn in, and thus more current flows through the circuit.

The base current is the controlling current, and the gain of the transistor is proportional to the base current. To ensure that the base current does not exceed the maximum rating, a resistive voltage divider is placed between the collector and the base. The voltage drop across this voltage divider determines the base current and thus the gain of the transistor.

The 2SD1618T-TD-E also features an internally integrated diode, which allows the transistor to be operated over a wide temperature range, while maintaining a low distortion ratio between the emitter and the collector. This allows the transistor to be used in applications where high levels of current and voltage are transmitted over long distances. It can also be used in power control applications, switching supplies, motor controllers, and low noise amplifiers.

The 2SD1618T-TD-E is also designed with a built-in protection mechanism, which prevents damage due to sudden changes in current or voltage. This protection mechanism helps to ensure that the transistor operates for a long time and with reliable performance. Additionally, the transistor is also designed with surge protection, maximizing its performance and lifespan even when operating under high-speed switching conditions.

Overall, the 2SD1618T-TD-E is an ideal choice for a variety of power, audio, video, and logic applications. Its wide supply and temperature range, low saturation voltage, low capacitive coupling, and high breakdown voltage allow it to be used in a variety of applications. Its built-in protection mechanisms also make it an ideal choice for high speed switching applications. Furthermore, its wide temperature range and low capacitive coupling make it well-suited for use in power control, switching supplies, motor controllers and low noise amplifiers.

The specific data is subject to PDF, and the above content is for reference

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