2SD1859TV2Q

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	700mA
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 100mA, 3V
Power - Max:	1W
Frequency - Transition:	120MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	3-SIP
Supplier Device Package:	ATV
Base Part Number:	2SD1859

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2SD1859TV2Q Applications and Working Principles

Bipolar junction transistors (BJT) are commonly used in electronic circuits as amplifiers, oscillators, and switches. The 2SD1859TV2Q is a single-stage, 0.15A, -40V NPN BJT. It is available in the TO-92 package.

2SD1859TV2Q Applications

The 2SD1859TV2Q is a common and quite versatile general-purpose NPN BJT. Among the many applications it can be used for are:

• Amplifiers: The 2SD1859TV2Q is a small-signal amplifier, with a DC current gain of up to 450 and an AC current gain from 10-20. It can be used in low-noise, low-power audio circuits.
• Switches: When used in switch circuits, the 2SD1859TV2Q can handle currents of up to 0.15A and voltages of up to -40V.
• Oscillators: The 2SD1859TV2Q can be used to construct high-frequency astable multivibrators, Colpitts oscillators and crystal oscillators.
• Logic Circuits: By using the 2SD1859TV2Q as an inverter and various other logic gates, circuits can be used to build complex logic functions.

2SD1859TV2Q Working Principles

A BJT is a three-terminal electronic device composed of a layer of semiconductor material, either silicon or germanium, sandwiched between two other layers of semiconductor material that form two PN junctions. They are so-called “n-p-n” transistors in which the layer of semiconductor material is n-type and the two layers of material sandwiching it form two p-type junctions. The two p-type junctions are commonly referred to as the base and collector while the n-type Layer between them is called the emitter.The current flowing through a BJT is controlled by the current flowing through the base. When a small current flows through the base, it opens a channel for current to flow between the collector and the emitter. This results in a large amplification of the current flowing from the base to the collector, which can be up to 100 times. This current flow is regulated by the β (beta) gain, which is the ratio of the collector current (Ic) divided by the base current (Ib).When reverse voltage is applied to the base-emitter junction, the current flowing from the collector to the emitter is reduced. This is known as the “cut-off” region, where the current flow is either completely off or reduced significantly when compared to the active region.

Conclusion

The 2SD1859TV2Q is a type of NPN BJT transistor. It can be used in electronic circuits as amplifiers, oscillators, and switches. It has a DC current gain of up to 450 and an AC current gain from 10-20, and can handle currents of up to 0.15A and voltages of up to -40V. The current flow through a BJT is controlled by the current flowing through the base and is regulated by the β gain.

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