2SD1624T-TD-H

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Bipolar junction transistors, also known as BJTs, are auxiliary components used in power management, signal switching, and amplification. The 2SD1624T-TD-H is an NPN type single transistor manufactured by Toshiba corporation. It is available in a TO-220 package and has a maximum temperature range of 70-150C. It is designed to work in low inrush and reverse voltage applications and is suitable for use in switching circuits, amplifier circuits, and power supply circuits.

The 2SD1624T-TD-H is designed with a collector-emitter breakdown voltage of 120V, collector-base breakdown voltage of 115V, and an emitter-base breakdown voltage of 5V. It also has a gain bandwidth product of 30MHz, a collector-emitter saturation voltage of 0.9V, and a power dissipation of 1W. Additionally, it has a collector current of 4A, total power dissipation of 1W, maximum operating temperature of 150C, and a minimum temperature range of -20C.

The 2SD1624T-TD-H is a NPN type transistor and it works according to the principles of classical transistor theory. In its basic circuit configuration, the transistor can be used as an amplifier or switch by controlling the base current. When the base current is small compared to the collector current, the transistor acts as an amplifier. When the base current is large compared to the collector current, it acts as a switch.

The 2SD1624T-TD-H is designed for use in a wide range of applications, including power supply circuits, low-voltage switching circuits, and audio amplification. Its low-voltage breakdown voltage makes it suitable for use in low voltage applications such as cellular phone applications. It is also able to handle high-power loads, making it suitable for use in power amplifier circuits. Additionally, its excellent gain bandwidth product makes it suitable for use in audio amplifiers, allowing it to faithfully reproduce audio signals with minimal distortion.

In summary, the 2SD1624T-TD-H is a single NPN type transistor manufactured by Toshiba. It has a maximum temperature range of 70-150C and its collector-emitter breakdown voltage is 120V. It has a gain bandwidth product of 30MHz and is suitable for use in low-voltage switching circuits, power supply circuits, and audio amplifiers. The 2SD1624T-TD-H is an excellent choice for applications that require reliable performance and stability.

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