Allicdata Part #: | 2SD1445AQ-ND |
Manufacturer Part#: |
2SD1445AQ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 40V 10A TO-220F |
More Detail: | Bipolar (BJT) Transistor NPN 40V 10A 120MHz 2W Thr... |
DataSheet: | 2SD1445AQ Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 330mA, 10A |
Current - Collector Cutoff (Max): | 50µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 90 @ 3A, 2V |
Power - Max: | 2W |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F-A1 |
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The 2SD1445AQ is a type of bipolar junction transistor, also known as a BJT, which is designed for use in amplifying or switching circuits. The 2SD1445AQ is a silicon, PNP, NPN, complement transistor which offers a variety of applications that make use of its unique design and features. In particular, it is an ideal choice for use in audio amplifiers and drivers, voltage regulators, and pulse generator circuits.
The 2SD1445AQ has two main components, the N-channel and P-channel, which form its structure. The N-channel is composed of an emitter region and two collectors. These are then connected to the base region. The P-channel is made up of a base, an emitter and two collectors. The P-channel is designed so that the base is connected to the collector regions and the emitter to the N-channel\'s collectors. The base of the P-channel is also connected to the source.
The 2SD1445AQ has an HFE (hFE, or current gain) rating of 100 and a voltage range of between -25V and 40V, making it suitable for use in audio amplifiers and drivers as well as voltage regulator circuits. These transistors are also used in pulse generator circuits and provide a low-noise operation. By using the P-channel and N-channel in tandem, the 2SD1445AQ can achieve a high efficiency in providing current, power and signal amplification.
The 2SD1445AQ works on the principle of a thermal runaway process. This involves the thermal energy from the base being unevenly transferred to the collector causing a gradual buildup of thermal energy. This thermal buildup eventually causes a thermal runaway process and results in the transistor increasing its current flow as heat is generated. This helps to regulate the signal going through the transistor and keeps it from drifting too much. The 2SD1445AQ is also able to provide a very low thermal resistance, which helps to reduce the amount of heat that is dissipated in the application.
The 2SD1445AQ is an ideal choice for those looking for an affordable, yet reliable and efficient, bipolar junction transistor. It is well suited for use in audio amplifiers and drivers, voltage regulators, and pulse generator circuits. It has a wide range of operating conditions, making it well versed in many applications. Its thermal runaway process helps to regulate the signal going through the transistor and its low thermal resistance helps to reduce the amount of heat dissipated in the application. With a current gain of an impressive 100, the 2SD1445AQ is capable of providing extremely accurate and reliable signal amplifications, making it an ideal choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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