2SD1628G-TD-E Allicdata Electronics
Allicdata Part #:

2SD1628G-TD-EOSTR-ND

Manufacturer Part#:

2SD1628G-TD-E

Price: $ 0.20
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 20V 5A SOT89-3
More Detail: Bipolar (BJT) Transistor NPN 20V 5A 120MHz 500mW S...
DataSheet: 2SD1628G-TD-E datasheet2SD1628G-TD-E Datasheet/PDF
Quantity: 2000
1 +: $ 0.20000
10 +: $ 0.19400
100 +: $ 0.19000
1000 +: $ 0.18600
10000 +: $ 0.18000
Stock 2000Can Ship Immediately
$ 0.2
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Power - Max: 500mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP
Description

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2SD1628G-TD-E is a type of bipolar junction transistor that is mainly used as an amplifier in a variety of different electrical applications. It is a single transistor package that has an NPN-type base and a collector and an emitter. This transistor can be used for both amplification and switching purposes depending on how it is used. It has high current gain, low leakage current, and low on-resistance. This makes it a good choice for many electrical applications.

The 2SD1628G-TD-E is mainly used in audio and video amplifiers, radio-frequency amplifiers, and power amplifiers. It is also used in switching regulators, oscillators, voltage regulators, and power control circuits. A variety of other applications such as amplifying TV sets, sound effects, and low-level audio signals also make use of this transistor.

The working principle of 2SD1628G-TD-E is quite simple. It is based on the basic principles of current flow in semiconductors that is, when voltage is applied to a gate of the transistor, current will flow through the collector-base of the transistor, resulting in a current gain. The transistor\'s collector and emitter will act as either a current source or current sink depending on the voltage applied to its gate. When the gate voltage is low, the transistor behaves like a current source and the collector current flowing through the transistor is greater than the current flowing into the base. When the gate voltage is high, the transistor behaves like a current sink and the collector current is less than the base current.

The current gain of 2SD1628G-TD-E is quite high, and is generally between 200 and 500. The collector-emitter voltage of this transistor is also quite high and can reach up to about 100 volts. This makes it ideal for applications that require high-power transistors. The chip also has a low on-resistance, which means it can provide very good electronic control, which is important in many applications.

The 2SD1628G-TD-E is a reliable and robust transistor and is used in a wide range of applications. Its high current gain and low leakage current make it a good choice for many applications, and its low on-resistance allows for good control over the current flow. It is a single transistor package, which makes it easy to use and cost-effective. It can be used for both amplification and switching purposes, making it a great choice for a variety of electrical applications.

The specific data is subject to PDF, and the above content is for reference

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