
Allicdata Part #: | 2SD16330P-ND |
Manufacturer Part#: |
2SD16330P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN DARL 100V 5A TO-220F |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 100V 5A ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 3mA, 3A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 5000 @ 3A, 3V |
Power - Max: | 2W |
Frequency - Transition: | 15MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F-A1 |
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2SD16330P is a single transistor bi-polar junction transistor (BJT) specifically designed for the switching of medium power loads with low current drain. It features a low voltage drop, fast switching speeds and a high-current capability. The device offers excellent performance in a wide range of applications and can be used as a replacement for other transistors, such as MOSFETs and IGBTs.
2SD16330P has been designed to operate in a range of applications where switching medium power loads is required and where the current drain is lower than that of other types of transistors. The device features a low voltage drop, which helps reduce power consumption and increase efficiency in these applications. Additionally, its fast switching speed, which allows for fast response to changes in load conditions, is ideal for applications requiring a quick response time.
The 2SD16330P’s high-current capability also allows for its use as a replacement for other types of transistors in high-power applications. By using this device, engineers can reduce their reliance on high-power and high-voltage transistors without sacrificing performance. The device is designed to handle power levels up to 200W and can be used in a variety of high-power and high-voltage applications.
The 2SD16330P’s working principle is based on the principle of a bi-polar junction transistor. A gate signal controls the current flow through the emitter-base and collector-base junctions. The gate signal determines the logic level of the device and the current flow through the junctions. The device can also be used in a variety of switching applications due to its low voltage drop.
The 2SD16330P is a versatile device, offering excellent performance in a variety of applications. It can be used to switch medium power loads and can also be used to replace other types of transistors, such as MOSFETs and IGBTs, in high-power and high-voltage applications. The device’s low voltage drop and fast switching speeds make it an ideal choice for many types of applications.
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2SD1859TV2R | ROHM Semicon... | -- | 1000 | TRANS NPN 80V 0.7A ATVBip... |
2SD1760TLQ | ROHM Semicon... | -- | 1000 | TRANS NPN 50V 3A SOT-428B... |
2SD1815S-TL-H | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 100V 3A TP-FABi... |
2SD1012F-SPA-AC | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 15V 0.7A SPABip... |
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