2SD1816T-H

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 200mA, 2A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 500mA, 5V
Power - Max:	1W
Frequency - Transition:	180MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	TP
Base Part Number:	2SD1816

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2SD1816T-H Application Field and Working Principle

The 2SD1816T-H is a silicon NPN epitaxial type bipolar transistor featuring fast switching, ease of mounting and wide applicability. This transistor is designed for use in audio power amplifiers, drives of consumer electronic equipment and other switching operations.

General Description

The 2SD1816T-H is a low-cost, low-noise, and high-speed NPN bipolar junction transistor intended for audio power amplifier applications. It has been developed especially for consumer audio equipment and is rated for a peak repetitive collector current of 1.5A and Collector-Emitter forward voltage of 180V.The device is built with an internal ESD protection circuit and is rated for an operating temperature range from -40°C to +100°C. It is resistant to thermal shock and humidity, ideal for operation in outdoor and marine applications.

Application Field

The 2SD1816T-H is suitable for various types of consumer audio equipment and other switching operations. It is frequently used in drives of consumer electronic equipment such as CD players, car audios, and audio amplifiers.This transistor works well in applications that requires fast switching, easy mounting, and robustness. Due to its high speed and low noise characteristics, it is also in demand in other consumer audio equipment, data acquisition systems, and communications equipment.

Working Principle

Bipolar junction transistors (BJTs) are three terminal semiconductor devices consists of two p-n junctions. The 2SD1816T-H is a NPN type BJT, which means it consists of a n-type material sandwiched between two p-type materials.In principle, the 2SD1816T-H works by using the base electrode to control the flow of current between the emitter and collector. When bias current flows through the base, the base-emitter junction becomes forward biased, allowing current to flow from the collector to the emitter. By controlling the bias current, the BJT can be used to amplify current, voltage, or power.The 2SD1816T-H features two hFE ranges (low and high), which can be chosen by adding a resistor to the collector terminal. Low hFE range is preferable for driving loudspeakers, while high hFE range is more suitable for driving motors and other switching operations.

Conclusion

The 2SD1816T-H is a fast switching, low-cost, and low noise NPN bipolar junction transistor that has been designed for use in audio power amplifiers and other switching operations. It is suitable for use in outdoor, marine and other consumer audio equipment, data acquisition systems and communications equipment. The working principle of bipolar junction transistors is based on controlling the flow of current from the collector to the emitter using the base electrode. The 2SD1816T-H can also feature two hFE ranges for different applications.

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