2SD1835T-AA Discrete Semiconductor Products |
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Allicdata Part #: | 2SD1835T-AAOSTB-ND |
Manufacturer Part#: |
2SD1835T-AA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 2A NP |
More Detail: | Bipolar (BJT) Transistor NPN 50V 2A 150MHz 750mW T... |
DataSheet: | 2SD1835T-AA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 50mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 2V |
Power - Max: | 750mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | 3-NP |
Base Part Number: | 2SD1835 |
Description
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The 2SD1835T-AA is a single bipolar transistor, used primarily in the applied field of radio frequency (RF) power amplifiers. It is a high power, low-noise bipolar transistor specifically designed to suit the needs of RF power amplifiers in the range of VHF and SHF frequencies. It is highly suitable for both high frequency and low frequency signal transmission and amplification applications in a wide range of electronic products.The 2SD1835T-AA is manufactured using a layered epitaxial structure, and its physical characteristics reflect this construction method. It is extremely robust – making it an ideal choice for a variety of power amplifier applications, including those demanding extreme temperatures and conditions. It has a low thermal resistance – another factor that makes it an ideal choice for a variety of power amplifier applications. Additionally, its relatively high current-gain make it a great choice for applications requiring high current output.The 2SD1835T-AA is typically available in two different versions – the "A" version with an attached tab, and the "B" version with a reversed tab. Both versions come with a tolerance rating of +/-3%+. Additionally, the "A" version has an impressively low noise coefficient of 1.5, while the "B" version has a slightly higher noise coefficient of 2.0.The main working principle of the 2SD1835T-AA is the simple action of a homogeneous emitter, base and collector. When an electrical current is applied to the emitter of the transistor, it acts as a control device, allowing the current to flow through the collector. This allows for controlled current amplification which, in turn, is necessary for the power amplifier applications for which the 2SD1835T-AA is typically used. Additionally, because of its low noise coefficient, it can be used in low-noise applications where the noise generated by other transistors may be a problem.The 2SD1835T-AA is available in a variety of packages and size, allowing for greater design flexibility. It is a versatile and reliable choice for many types of power amplifier applications, including portable devices, networking equipment, and home theater receivers. It is also suitable for low-noise applications, as it has a low noise coefficient and is designed with a low thermal resistance. Another great benefit of the 2SD1835T-AA is its relatively low cost, making it affordable to most budgets. Additionally, it is a moderately easy transistor to work with – its simple design making it easy to integrate into almost any existing setup. In summary, the 2SD1835T-AA is one of the most popular single bipolar transistors available today, and for good reason. Its impressive specs, low cost and simple design combine to make it a great choice for a variety of power amplifier and low-noise applications. The 2SD1835T-AA is highly reliable and robust, making it an ideal choice for applications requiring high-temperatures, and with its wide availability in a variety of packages and sizes, it can easily be integrated into any existing setup.The specific data is subject to PDF, and the above content is for reference
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