2SD1858TV2P Allicdata Electronics
Allicdata Part #:

2SD1858TV2P-ND

Manufacturer Part#:

2SD1858TV2P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN 32V 1A ATV
More Detail: Bipolar (BJT) Transistor NPN 32V 1A 150MHz 1W Thro...
DataSheet: 2SD1858TV2P datasheet2SD1858TV2P Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: ATV
Description

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2SD1858TV2P is a kind of transistors - bipolar (BJT) - single. The 2SD1858TV2P is designed for use in VHF amplifier applications with high collector power dissipation. It provides outstanding gain performance with respect to linearity in high VHF applications due to its high forward beta and low noise figure characteristics.

2SD1858TV2P Application Field:

The 2SD1858TV2P is designed for VHF amplifier applications and can be used in a variety of applications such as low noise VHF amplifier stages, low distortion wide band amplifiers, video and radio frequency drivers and mixers, VHF relays, oscillators, preamplifiers, detectors, and multilayer circuits. This device can be used in switching circuits, amplifiers and in high load applications.

2SD1858TV2P Working Principle:

The 2SD1858TV2P works based on the principles of a transistor, which is a semiconductor device composed of three layers of different semiconductor materials. The transistor has three primary components: a base, a collector and an emitter. When the base receives an electric current, it modulates the voltage of the collector by increasing or decreasing the number of electrons flowing from the collector to the emitter. This works to reduce the power consumption of an electronic circuit while amplifying an electronic signal.

The 2SD1858TV2P is a silicon NPN epitaxial diffusion planar transistor, specifically designed for use in VHF amplifier applications. It is intended for use at collector voltages up to 30 volts and collector currents up to 1 ampere. It is provided in a TO-92 package, allowing it to be easily mounted on many types of circuit boards. It features a high voltage, high current gain and low noise figure, which make it ideal for high frequency applications.

The 2SD1858TV2P has a high collector power dissipation and excellent gain performance with respect to linearity. It provides excellent gain performance with respect to linearity in high VHF applications due to its high forward beta and low noise figure characteristics. It is an ideal choice for low noise VHF amplifier stages, low distortion wide band amplifiers, and video and radio frequency drivers and mixers.

The 2SD1858TV2P is a reliable, cost-effective solution for many types of high frequency applications and provides an excellent performance with respect to linearity and low noise in these applications. The low noise figure also makes it ideal for use in VHF relays, oscillators, preamplifiers, detectors, and multilayer circuits.

The specific data is subject to PDF, and the above content is for reference

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